是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
针数: | 165 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.B | HTS代码: | 8542.32.00.41 |
风险等级: | 5.69 | 最长访问时间: | 0.5 ns |
其他特性: | PIPELINED ARCHITECTURE, LATE WRITE | JESD-30 代码: | R-PBGA-B165 |
JESD-609代码: | e1 | 长度: | 15 mm |
内存密度: | 75497472 bit | 内存集成电路类型: | DDR SRAM |
内存宽度: | 36 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 165 |
字数: | 2097152 words | 字数代码: | 2000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2MX36 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 13 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GS8662T36BGD-167IT | GSI |
获取价格 |
DDR SRAM, 2MX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | |
GS8662T36BGD-200 | GSI |
获取价格 |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | |
GS8662T36BGD-200T | GSI |
获取价格 |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | |
GS8662T36BGD-250 | GSI |
获取价格 |
165 BGA | |
GS8662T36BGD-250I | GSI |
获取价格 |
165 BGA | |
GS8662T36BGD-300 | GSI |
获取价格 |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | |
GS8662T36BGD-300I | GSI |
获取价格 |
165 BGA | |
GS8662T36BGD-333 | GSI |
获取价格 |
165 BGA | |
GS8662T36BGD-333I | GSI |
获取价格 |
165 BGA | |
GS8662T36BGD-333T | GSI |
获取价格 |
DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |