Datasheet > 存储 > SRAM> GS8640V36GT-167

GS8640V36GT-167

更新时间： 2024-11-13 04:56:23

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
23页	596K
描述
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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技术参数
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GS8640V36GT-167 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.84
Is Samacsys：	N	最长访问时间：	8 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE	JESD-30 代码：	R-PQFP-G100
JESD-609代码：	e3	长度：	20 mm
内存密度：	75497472 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	100
字数：	2097152 words	字数代码：	2000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	2MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.6 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	PURE MATTE TIN	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

GS8640V36GT-167 数据手册

Product Preview

GS8640V18/32/36T-300/250/200/167

300 MHz–167 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

4M x 18, 2M x 32, 2M x 36

72Mb Sync Burst SRAMs

1.8 V V

1.8 V I/O

cycles can be initiated with either ADSP or ADSC inputs. In

Features

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

• FT pin for user-configurable flow through or pipeline

operation

• Single Cycle Deselect (SCD) operation

• 1.8 V +10%/–10% core power supply

• 1.8 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• Pb-Free 100-lead TQFP package available

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

Byte Write and Global Write

Functional Description

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Applications

The GS8640V18/32/36T is a 75,497,472-bit high performance

synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications,

ranging from DSP main store to networking chip set support.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Controls

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

Core and Interface Voltages

The GS8640V18/32/36T operates on a 1.8 V power supply. All

input are 1.8 V compatible. Separate output power (V

pins are used to decouple output noise from the internal circuits

and are 1.8 V compatible.

)

DDQ

Parameter Synopsis

-300

-250

-200

-167

Unit

2.3

3.3

2.5

4.0

3.0

5.0

3.5

6.0

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

400

480

340

410

290

350

260

305

5.5

6.5

7.5

8.0

Flow

Through

2-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

285

330

245

280

220

250

210

240

Rev: 1.00 9/2004

1/23

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...23

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与GS8640V36GT-167相关器件

型号	品牌	获取价格	描述	数据表
GS8640V36GT-167I	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36GT-167T	GSI	获取价格	Cache SRAM, 2MX36, 8ns, CMOS, PQFP100, LEAD FREE, TQFP-100
GS8640V36GT-200	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36GT-200I	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36GT-250	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36GT-250I	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36GT-250IT	GSI	获取价格	Cache SRAM, 2MX36, 6.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
GS8640V36GT-250T	GSI	获取价格	Cache SRAM, 2MX36, 6.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
GS8640V36GT-300	GSI	获取价格	Cache SRAM, 2MX36, 5.5ns, CMOS, PQFP100, TQFP-100
GS8640V36GT-300I	GSI	获取价格	4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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