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GS8550BU PDF预览

GS8550BU

更新时间: 2024-11-10 23:54:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
2页 22K
描述
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 800MA I(C) | TO-226AA

GS8550BU 数据手册

 浏览型号GS8550BU的Datasheet PDF文件第2页 
GS8550xU  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Small Signal Transistor (PNP)  
TO-226AA (TO-92)  
Features  
0.142 (3.6)  
0.181 (4.6)  
PNP Silicon Epitaxial Planar Transistors for amplifier  
applications. Especially suitable for low power output  
stages such as portable radios in class-B push-pull  
operation.  
• Complementary to GS8050xU  
• The “x” in the part number can be B, C or D, depending  
on the current gain.  
Mechanical Data  
Case: TO-92 Plastic Package  
Weight: approx. 0.18g  
max.  
0.022 (0.55)  
Packaging Codes/Options:  
E6/Bulk 5K per container, 20K per box  
E7/4K per Ammo mag., 20K per box  
0.098 (2.5)  
Bottom  
View  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
25  
V
6  
V
Collector Current  
800  
mA  
mW  
°C/W  
°C  
Power Dissipation at Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
625(1)  
200(1)  
150  
RθJA  
Tj  
Storage Temperature Range  
TS  
55 to +150  
°C  
Note:  
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case  
Document Number 88194  
10-May-02  
www.vishay.com  
1

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