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GS8342T08E-167 PDF预览

GS8342T08E-167

更新时间: 2024-11-17 02:51:15
品牌 Logo 应用领域
GSI 静态存储器双倍数据速率
页数 文件大小 规格书
37页 1722K
描述
36Mb SigmaCIO DDR-II Burst of 2 SRAM

GS8342T08E-167 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.77
最长访问时间:0.5 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B165长度:17 mm
内存密度:33554432 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:165
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX8
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15 mmBase Number Matches:1

GS8342T08E-167 数据手册

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Preliminary  
GS8342T08/09/18/36E-333/300/267*/250/200/167  
167 MHz–333 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
36Mb SigmaCIO DDR-II  
Burst of 2 SRAM  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
Features  
• Simultaneous Read and Write SigmaCIO™ Interface  
• Common I/O bus  
• JEDEC-standard pinout and package  
• Double Data Rate interface  
• Byte Write (x36 and x18) and Nybble Write (x8) function  
• Burst of 2 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation with self-timed Late Write  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
• Pin-compatible with present 9Mb and 18Mb and future 72Mb  
and 144Mb devices  
Bottom View  
165-Bump, 15 mm x 17 mm BGA  
1 mm Bump Pitch, 11 x 15 Bump Array  
SigmaCIOFamily Overview  
clock inputs, not differential inputs. If the C clocks are tied  
high, the K clocks are routed internally to fire the output  
registers instead.  
The GS8342T08/09/18/36E are built in compliance with the  
SigmaCIO DDR-II SRAM pinout standard for Common I/O  
synchronous SRAMs. They are 37,748,736-bit (36Mb)  
SRAMs. The GS8342T08/09/18/36E SigmaCIO SRAMs are  
just one element in a family of low power, low voltage HSTL  
I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Common I/O x36 and x18 SigmaCIO DDR-II B2 RAMs  
always transfer data in two packets. When a new address is  
loaded, A0 presets an internal 1 bit address counter. The  
counter increments by 1 (toggles) for each beat of a burst of  
two data transfer.  
Clocking and Addressing Schemes  
Common I/O x8 SigmaCIO DDR-II B2 RAMs always transfer  
data in two packets. When a new address is loaded, the LSB  
is internally set to 0 for the first read or write transfer, and  
incremented by 1 for the next transfer. Because the LSB is  
tied off internally, the address field of a x8 SigmaCIO DDR-II  
B4 RAM is always one address pin less than the advertised  
index depth (e.g., the 8M x 8 has a 2M addressable index).  
The GS8342T08/09/18/36E SigmaCIO DDR-II SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer. The device also allows the user to manipulate the  
output register clock inputs quasi independently with the C and  
C clock inputs. C and C are also independent single-ended  
Parameter Synopsis  
-333  
-300  
-267*  
-250  
-200  
-167  
tKHKH  
tKHQV  
3.0 ns  
3.3 ns  
3.75 ns  
4.0 ns  
5.0 ns  
6.0 ns  
0.5 ns  
0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns  
* The 267 MHz speed bin is only available on the x18 part.  
Rev: 1.02 8/2005  
1/37  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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