Datasheet > GS8342T08GE-400I

GS8342T08GE-400I

更新时间： 2024-11-19 09:08:47

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
33页	783K
描述
Standard SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BGA-165

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GS8342T08GE-400I 数据手册

Preliminary

GS8342T08/18/36E-400/300/250/200/167

165-Bump BGA

Commercial Temp

Industrial Temp

167 MHz–400 MHz

36Mb SigmaCIO DDR-II

Burst of 2 SRAM

1.8 V V

1.8 V and 1.5 V I/O

Features

• Simultaneous Read and Write SigmaCIO™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36 and x18) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +150/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• Pin-compatible with present 9Mb and 18Mb and future 72Mb

and 144Mb devices

Bottom View

165-Bump, 15 mm x 17 mm BGA

SigmaCIO™ Family Overview

1 mm Bump Pitch, 11 x 15 Bump Array

The GS8342T08/18/36E are built in compliance with the

SigmaCIO DDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 37,748,736-bit (36Mb)

SRAMs. The GS8342T08/18/36E SigmaCIO SRAMs are just

one element in a family of low power, low voltage HSTL I/O

SRAMs designed to operate at the speeds needed to implement

economical high performance networking systems.

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

Common I/O x36 and x18 SigmaCIO DDR-II B2 RAMs

always transfer data in two packets. When a new address is

loaded, A0 presets an internal 1 bit address counter. The

counter increments by 1 (toggles) for each beat of a burst of

two data transfer.

Clocking and Addressing Schemes

The GS8342T08/18/36E SigmaCIO DDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

Common I/O x8 SigmaCIO DDR-II B2 RAMs always transfer

data in two packets. When a new address is loaded, the LSB

is internally set to 0 for the first read or write transfer, and

incremented by 1 for the next transfer. Because the LSB is

tied off internally, the address field of a x8 SigmaCIO DDR-II

B4 RAM is always one address pin less than the advertised

index depth (e.g., the 4M x 8 has a 2M addressable index).

Parameter Synopsis

-400

-300

3.3 ns

-250

4.0 ns

-200

-167

tKHKH

tKHQV

2.5 ns

5.0 ns

6.0 ns

0.5 ns

0.45 ns 0.45 ns 0.45 ns 0.45 ns

Rev: 1.00d 1/2004

1/33

Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.

12 3 4 5 6 7...33

中文翻译

下载PDF

与GS8342T08GE-400I相关器件

型号	品牌	获取价格	描述	数据表
GS8342T09AE-300I	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AE-300IT	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AE-300T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AE-333IT	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AE-333T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AGE-300	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09AGE-300IT	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09AGE-333T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09BD-250	GSI	获取价格	165 BGA
GS8342T09BD-250I	GSI	获取价格	165 BGA

与GS8342T08GE-400I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8342T08GE-400I

GS8342T08GE-400I 数据手册

与GS8342T08GE-400I相关器件

与GS8342T08GE-400I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8342T08GE-400I

GS8342T08GE-400I 数据手册

与GS8342T08GE-400I相关器件

与GS8342T08GE-400I相关文章

您还可以找

您在本页遇到什么问题？