Datasheet > GS8342T09AE-333IT

GS8342T09AE-333IT

更新时间： 2024-11-18 14:42:23

品牌	Logo	应用领域
GSI		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
36页	654K
描述
DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

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GS8342T09AE-333IT 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA,	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.79
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PBGA-B165	长度：	17 mm
内存密度：	37748736 bit	内存集成电路类型：	DDR SRAM
内存宽度：	9	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX9	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.5 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm
Base Number Matches：	1

GS8342T09AE-333IT 数据手册

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GS8342T08/09/18/36AE-333/300/250/200/167

167 MHz–333 MHz

165-Bump BGA

Commercial Temp

Industrial Temp

36Mb SigmaDDR-II™

Burst of 2 SRAM

1.8 V V

1.8 V and 1.5 V I/O

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

Features

• Simultaneous Read and Write SigmaDDR-II™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36, x18, and x9) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

Each internal read and write operation in a SigmaDDR-II B2

RAM is two times wider than the device I/O bus. An input data

bus de-multiplexer is used to accumulate incoming data before

it is simultaneously written to the memory array. An output

data multiplexer is used to capture the data produced from a

single memory array read and then route it to the appropriate

output drivers as needed.

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

• Pin-compatible with present 9Mb and 18Mb and future 72Mb

and 144Mb devices

When a new address is loaded into a x18 or x36 version of the

part, A0 is used to initialize the pointers that control the data

multiplexer / de-multiplexer so the RAM can perform "critical

word first" operations. From an external address point of view,

regardless of the starting point, the data transfers always follow

the same sequence {0, 1} or {1, 0} (where the digits shown

represent A0).

SigmaDDR-II™ Family Overview

The GS8342T08/09/18/36AE are built in compliance with the

SigmaDDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 37,748,736-bit (36Mb)

SRAMs. The GS8342T08/09/18/36AE SigmaDDR-II SRAMs

are just one element in a family of low power, low voltage

HSTL I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

Unlike the x18 and x36 versions, the input and output data

multiplexers of the x8 and x9 versions are not preset by

address inputs and therefore do not allow "critical word first"

operations. The address fields of the x8 and x9 SigmaDDR-II

B2 RAMs are one address pin less than the advertised index

depth (e.g., the 4M x 8 has a 2M addressable index, and A0 is

not an accessible address pin).

Clocking and Addressing Schemes

The GS8342T08/09/18/36AE SigmaDDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

Parameter Synopsis

-333

-300

3.3 ns

-250

4.0 ns

-200

-167

tKHKH

tKHQV

3.0 ns

5.0 ns

6.0 ns

0.5 ns

0.45 ns 0.45 ns 0.45 ns 0.45 ns

Rev: 1.06a 11/2011

1/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...36

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与GS8342T09AE-333IT相关器件

型号	品牌	获取价格	描述	数据表
GS8342T09AE-333T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
GS8342T09AGE-300	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09AGE-300IT	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09AGE-333T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS8342T09BD-250	GSI	获取价格	165 BGA
GS8342T09BD-250I	GSI	获取价格	165 BGA
GS8342T09BD-250T	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, BGA-165
GS8342T09BD-300	GSI	获取价格	165 BGA
GS8342T09BD-300I	GSI	获取价格	165 BGA
GS8342T09BD-300IT	GSI	获取价格	DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, BGA-165

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