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GS81302D09E-300 PDF预览

GS81302D09E-300

更新时间: 2024-12-02 13:47:55
品牌 Logo 应用领域
GSI 双倍数据速率静态存储器内存集成电路
页数 文件大小 规格书
34页 581K
描述
165 BGA

GS81302D09E-300 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:12 weeks
风险等级:5.33最长访问时间:0.45 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PBGA-B165
长度:17 mm内存密度:150994944 bit
内存集成电路类型:DDR SRAM内存宽度:9
功能数量:1端子数量:165
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX9
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.5 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15 mm

GS81302D09E-300 数据手册

 浏览型号GS81302D09E-300的Datasheet PDF文件第2页浏览型号GS81302D09E-300的Datasheet PDF文件第3页浏览型号GS81302D09E-300的Datasheet PDF文件第4页浏览型号GS81302D09E-300的Datasheet PDF文件第5页浏览型号GS81302D09E-300的Datasheet PDF文件第6页浏览型号GS81302D09E-300的Datasheet PDF文件第7页 
GS81302D08/09/18/36E-375/350/333/300/250  
375 MHz–250 MHz  
1.8 V V  
1.8 V and 1.5 V I/O  
TM  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
144Mb SigmaQuad -II  
DD  
Burst of 4 SRAM  
Features  
Clocking and Addressing Schemes  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 4 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
The GS81302D08/09/18/36E SigmaQuad-II SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer. The device also allows the user to manipulate the  
output register clock inputs quasi independently with the C and  
C clock inputs. C and C are also independent single-ended  
clock inputs, not differential inputs. If the C clocks are tied  
high, the K clocks are routed internally to fire the output  
registers instead.  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with present 144 Mb devices  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Each internal read and write operation in a SigmaQuad-II B4  
RAM is four times wider than the device I/O bus. An input  
data bus de-multiplexer is used to accumulate incoming data  
before it is simultaneously written to the memory array. An  
output data multiplexer is used to capture the data produced  
from a single memory array read and then route it to the  
appropriate output drivers as needed. Therefore the address  
field of a SigmaQuad-II B4 RAM is always two address pins  
less than the advertised index depth (e.g., the 16M x 8 has a  
4M addressable index).  
SigmaQuadFamily Overview  
The GS81302D08/09/18/36E are built in compliance with the  
SigmaQuad-II SRAM pinout standard for Separate I/O  
synchronous SRAMs. They are 150,994,944-bit (144Mb)  
SRAMs. The GS81302D08/09/18/36E SigmaQuad SRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Parameter Synopsis  
-375  
-350  
2.86 ns  
0.45 ns  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
-250  
4.0 ns  
0.45 ns  
tKHKH  
tKHQV  
2.66 ns  
0.45 ns  
Rev: 1.04c 8/2017  
1/34  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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