Datasheet > GS81284Z36B-167VI

GS81284Z36B-167VI

更新时间： 2024-10-03 09:50:39

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
28页	955K
描述
ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GS81284Z36B-167VI 数据手册

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第2页

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第3页

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第4页

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第5页

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第6页

浏览型号GS81284Z36B-167VI的Datasheet PDF文件第7页

Preliminary

GS81284Z18/36B-xxxV

119-Bump BGA

Commercial Temp

Industrial Temp

200 MHz–167 MHz

144Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 8Mb, 36Mb, and 72Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-BGA package

The GS81284Z18/36-xxxV may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

• RoHS-compliant 119-BGA packages available

Functional Description

The GS81284Z18/36(B)-xxxV is a 144Mbit Synchronous

Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL

or other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS81284Z18/36-xxxV is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 119-bump p BGA package.

Parameter Synopsis

-200

-167

Unit

t_KQ

3.0

5.0

3.4

6.0

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

420

480

385

430

t_KQ

7.5

8.0

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

340

370

330

360

Rev: 1.01 1/2008

1/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...28

中文翻译

下载PDF

与GS81284Z36B-167VI相关器件

型号	品牌	获取价格	描述	数据表
GS81284Z36B-167VIT	GSI	获取价格	ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-167VT	GSI	获取价格	ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-200	GSI	获取价格	119 BGA
GS81284Z36B-200I	GSI	获取价格	119 BGA
GS81284Z36B-200IV	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-200IVT	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-200V	GSI	获取价格	144Mb Pipelined and Flow Through Synchronous NBT SRAM
GS81284Z36B-200VI	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-200VIT	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
GS81284Z36B-250	GSI	获取价格	119 BGA

与GS81284Z36B-167VI相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

GS81284Z36B-167VI

GS81284Z36B-167VI 数据手册

与GS81284Z36B-167VI相关器件

与GS81284Z36B-167VI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS81284Z36B-167VI

GS81284Z36B-167VI 数据手册

与GS81284Z36B-167VI相关器件

与GS81284Z36B-167VI相关文章

您还可以找

您在本页遇到什么问题？