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GS74104AGX-10I PDF预览

GS74104AGX-10I

更新时间: 2024-11-06 20:36:47
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
15页 434K
描述
Standard SRAM, 1MX4, 10ns, CMOS, PBGA48, 6 X 10 MM, FBGA-48

GS74104AGX-10I 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.18
Is Samacsys:N最长访问时间:10 ns
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:10 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
湿度敏感等级:3功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX4封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

GS74104AGX-10I 数据手册

 浏览型号GS74104AGX-10I的Datasheet PDF文件第2页浏览型号GS74104AGX-10I的Datasheet PDF文件第3页浏览型号GS74104AGX-10I的Datasheet PDF文件第4页浏览型号GS74104AGX-10I的Datasheet PDF文件第5页浏览型号GS74104AGX-10I的Datasheet PDF文件第6页浏览型号GS74104AGX-10I的Datasheet PDF文件第7页 
GS74104ATP/J/X  
SOJ, TSOP, FP-BGA  
Commercial Temp  
Industrial Temp  
6, 7, 8, 10, 12 ns  
3.3 V VDD  
Center VDD and VSS  
1M x 4  
4Mb Asynchronous SRAM  
SOJ 1M x 4-Pin Configuraton  
Features  
• Fast access time: 6, 7, 8, 10, 12 ns  
• CMOS low power operation: 155/135/120/95/85 mA at  
minimum cycle time  
32  
A5  
1
A4  
31  
2
A3  
A6  
30  
A7  
3
A2  
• Single 3.3 V power supply  
29  
4
A1  
A8  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40° to 85°C  
• Package line up  
28  
A9  
5
A0  
27  
6
CE  
OE  
32-pin  
26  
7
DQ1  
VDD  
VSS  
DQ2  
WE  
A19  
A18  
A17  
A16  
A15  
DQ4  
25  
8
VSS  
VDD  
DQ3  
A10  
A11  
A12  
A13  
A14  
NC  
400 mil SOJ  
24  
23  
22  
21  
20  
19  
18  
17  
9
J: 400 mil, 32-pin SOJ package  
TP: 400 mil, 44-pin TSOP Type II package  
X: 6 mm x 10 mm Fine Pitch Ball Grid Array  
package  
10  
11  
12  
13  
14  
15  
16  
Description  
The GS74104A is a high speed CMOS Static RAM organized  
as 1,048,576 words by 4 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS operates on a  
single 3.3 V power supply and all inputs and outputs are TTL-  
compatible. The GS74104A is available in 400 mil SOJ, 400  
mil TSOP Type-II, and 6 mm x 10 mm FP-BGA packages.  
FP-BGA 256K x 16 Bump Configuration (Package X)  
1
2
3
4
5
6
A
B
C
D
E
F
LB  
OE  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
NC  
DQ16 UB  
CE DQ1  
DQ2 DQ3  
DQ4 VDD  
Pin Descriptions  
DQ14 DQ15 A5  
VSS DQ13 A17  
VDD DQ12 NC  
DQ11 DQ10 A8  
Symbol  
A0–A19  
DQ1–DQ4  
CE  
Description  
Address input  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
A16 DQ5 VSS  
A9  
DQ7 DQ6  
WE DQ8  
WE  
G
H
DQ9 NC  
NC A12  
A10  
A13  
A11  
A14  
OE  
V
A15  
NC  
DD  
V
Ground  
SS  
NC  
No connect  
6 x 10 mm Bump Pitch  
Rev: 1.02 3/2002  
1/15  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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