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GS74104ATP-10I PDF预览

GS74104ATP-10I

更新时间: 2024-12-01 04:19:51
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
11页 516K
描述
1M x 4 4Mb Asynchronous SRAM

GS74104ATP-10I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.46最长访问时间:10 ns
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
湿度敏感等级:3功能数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX4封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mm

GS74104ATP-10I 数据手册

 浏览型号GS74104ATP-10I的Datasheet PDF文件第2页浏览型号GS74104ATP-10I的Datasheet PDF文件第3页浏览型号GS74104ATP-10I的Datasheet PDF文件第4页浏览型号GS74104ATP-10I的Datasheet PDF文件第5页浏览型号GS74104ATP-10I的Datasheet PDF文件第6页浏览型号GS74104ATP-10I的Datasheet PDF文件第7页 
GS74104ATP/J  
8, 10, 12 ns  
SOJ, TSOP  
Commercial Temp  
Industrial Temp  
1M x 4  
3.3 V V  
DD  
Center V and V  
4Mb Asynchronous SRAM  
DD  
SS  
Features  
SOJ 1M x 4-Pin Configuraton  
• Fast access time: 8, 10, 12 ns  
• CMOS low power operation: 120/95/85 mA at minimum  
cycle time  
• Single 3.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
A4  
A5  
2
A3  
A6  
3
A2  
A7  
4
A1  
A8  
5
A0  
A9  
6
CE  
OE  
DQ4  
VSS  
VDD  
DQ3  
A10  
A11  
A12  
A13  
A14  
NC  
• Industrial Temperature Option: –40° to 85°C  
• Package line up  
32-pin  
7
DQ1  
VDD  
VSS  
DQ2  
WE  
A19  
A18  
A17  
A16  
A15  
8
400 mil SOJ  
J: 400 mil, 32-pin SOJ package  
GJ:RoHS-compliant 400 mil, 32-pin SOJ package  
TP: 400 mil, 44-pin TSOP Type II package  
GP:RoHS-compliant 400 mil, 44-pin TSOP Type II  
package  
9
10  
11  
12  
13  
14  
15  
16  
Description  
The GS74104A is a high speed CMOS Static RAM organized  
as 1,048,576 words by 4 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS operates on a  
single 3.3 V power supply and all inputs and outputs are TTL-  
compatible. The GS74104A is available in 400 mil SOJ and  
400 mil TSOP Type-II packages.  
TSOP-II 1M x 4-Pin Configuration  
1
44  
NC  
NC  
NC  
NC  
A5  
NC  
NC  
A4  
2
43  
42  
3
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
4
5
A3  
A6  
Pin Descriptions  
6
A2  
A7  
7
A1  
A8  
Symbol  
A0–A19  
DQ1–DQ4  
CE  
Description  
Address input  
8
A0  
A9  
9
CE  
DQ1  
VDD  
VSS  
DQ2  
WE  
A19  
A18  
A17  
A16  
OE  
10  
11  
12  
13  
14  
15  
16  
17  
18  
DQ4  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
44-pin  
VSS  
VDD  
DQ3  
A10  
A11  
A12  
A13  
A14  
NC  
400 mil TSOP II  
WE  
OE  
V
DD  
V
Ground  
SS  
NC  
No connect  
A15  
NC  
19  
20  
21  
22  
NC  
NC  
NC  
24  
23  
NC  
NC  
Rev: 1.06 6/2006  
1/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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