Datasheet > GS1G-TS03P

GS1G-TS03P

更新时间： 2024-02-02 07:20:21

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	865K
描述
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC, SMAJ, 2 PIN, Signal Diode

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中文翻译

获取价格

技术参数
数据手册

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GS1G-TS03P 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	SMAJ, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.31
Base Number Matches：	1

GS1G-TS03P 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

GS1G-TS03

Features

1.0 Amp

Silicon Rectifier

400 Volts

•

Fo r surface Mount Applications

Extremely Low Therma l Resistance

Easy Pick And Place

High Temp Soldering: 26 °C for seconds At Terminals

Maximum Ratings

DO-214AC

(SMAJ) (High Profile)

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

Cathode Band

Maximum

Recurrent

Peak

Reverse

Vol tage

Maximum

Blocking

Voltage

Maximum

RMS

Voltage

MCC

Device

Part Number

Marking

GS1G-TS03

GS1G

400V

280V

400V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

current

I_F(A)V

1.0A

T_J= 75°C

DIMENSIONS

INCHES

MIN

.078

.067

.002

---

.035

.065

.205

.160

.100

MIN

1.98

1.70

.05

---

.89

1.65

5.21

4.06

2.57

8.3ms, half sine,

T_J= 150°C

Peak For ward Surge

Current

I_FSM

50A

DIM

MAX

.116

.089

.008

.02

.055

.096

.224

.180

.112

MAX

2.95

2.25

.20

NOTE

.51

Maximum

Instantaneous

For ward Voltage

1.1V

1.15V

1.45V

I_FM= 1.0A;

I_FM= 5.0A;

I_FM= 8.0A;

1.40

2.45

5.69

4.57

2.84

V_F

Maximum DC

Reverse Current At

Rated DC Blocking

Vol tage

SUGGESTED SOLDER

PAD LAYOUT

I_R

V_R= 400V

5.0µA

0.090”

Typical Junction

Capacitance

Mea sured at

1.0MHz, V_R=4.0V

C_J

15pF

0.085”

0.070”

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

www.mccsemi.com

Version: 3

2003/01/16

12 3

中文翻译

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