Datasheet > GS1J

GS1J

更新时间： 2024-09-28 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	423K
描述
1A patch rectifier diode 600V SMA series

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GS1J 数据手册

GS1A - GS1M

SURFACE MOUNT RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

! Glass Passivated Die Construction

! Ideally Suited for Automatic Assembly

! Low Forward Voltage Drop

! Low Power Loss

! Built-in Strain Relief

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! Plastic Case Material has UL Flammability

SMA(DO-214AC)

Classification Rating 94V-O

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

! Case: SMA/DO-214AC, Molded Plastic

! Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

! Polarity: Cathode Band or Cathode Notch

! Marking: Type Number

! Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K GS1M

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

R(RMS)

280

1.0

Average Rectified Output Current @T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Reverse Recovery Time (Note 1)

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

ꢀ

°C/W

°C

STG

-65 to +175

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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