Datasheet > GS1J

GS1J

更新时间： 2024-01-12 01:27:52

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	505K
描述
1.0 AMPS. Surface Mount Silicon Rectifiers

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中文翻译

获取价格

技术参数
数据手册

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GS1J 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.83
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED

GS1J 数据手册

GS1A - GS1M

1.0 AMPS. Surface Mount Silicon Rectifiers

SMAE

RoHS

COMPLIANCE

Features

ꢀFor surface mounted application

ꢀEsay pick and place

ꢀLow forward voltage drop

ꢀHigh current capability

ꢀHigh surge current capability

ꢀHigh temperature soldering guaranteed:

260^oC / 10 seconds at terminals

ꢀPlastic material used carriers Underwriters

Laboratory Classification 94V-0

ꢀGreen compound with suffix “G” on packing code &

prefix “G” on datecode.

Mechanical Data

ꢀ

Cases: SMAE Molded plastic

Terminals: Lead free Finish

Polarity: Indicated by cathode band.

Weight: 0.073 grams

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol

GS1A GS1B GS1D GS1G GS1J GS1K GS1M Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

@Ta(See Fig. 1)

I_(AV)

I_FSM

1.0

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage (Note 1)

IF= 1.0A @Ta=25^oC

V_F

1.1

Maximum DC Reverse Current @ Ta=25^oC

@ Ta=125^oC

1.0

50.0

I_R

Typical Junction Capacitance(Note 3)

Rθ_JA

Rθ_JL

^OC/W

Typical Thermal Resistance (Note 2)

^OC

T_J

Operating Temperature Range

-55 to +150

T_STG

Storage Temperature Range

Notes: 1. Pulse Test with PW=300u sec, 1% Duty Cycle.

2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.

3. Measured at f=1.0MHz, VR= 4.0V D.C.

Version : A09

中文翻译

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