Datasheet > GS1A

GS1A

更新时间： 2024-11-07 10:35:47

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管光电二极管
页数	文件大小	规格书
3页	748K
描述
1 Amp Silicon Rectifier 50 to 1000 Volts

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中文翻译

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数据手册

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GS1A 数据手册

THRU

Features

1 Amp

Silicon Rectifier

50 to 1000 Volts

For Surface Mount Applications

Extremely Low Thermal Resistance

Easy Pick And Place

High Temp Soldering: 250°C for 10 Seconds At Terminals

Maximum Ratings

SMAE

· Operating Temperature: -65°C to +175°C

· Storage Temperature: -65°C to +175°C

· Maximum Thermal Resistance; 15°C/W Junction To Lead

Cathode Band

Maximum

Reccurrent

Peak Reverse

Voltage

Maximum Maximum

Device

Marking

RMS

Voltage

Blocking

Voltage

50V

100V

35V

70V

100V

200V

400V

140V

280V

200V

400V

600V

800V

1000V

420V

560V

700V

600V

800V

1000V

DIMENSIONS

INCHES

MIN

0.157

MIN

DIM

MAX

4.50

2.80

2.42

5.56

1.80

0.203

0.305

NOTE

Electrical Characteristics @ 25°C Unless Otherwise Specified

0.177

0.110

0.096

0.222

0.071

0.008

0.012

0.060

3.99

2.54

1.98

4.93

1.40

0.100

0.078

0.194

0.055

Average Forward

current

I_F(AV)

1.0A

T_J= 75°C

Peak Forward Surge

Current

I_FSM

50A

8.3ms, half sine,

T_J= 150°C

0.006

0.030

0.152

0.76

1.52

Maximum

I_FM= 1.0A;

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

T_J= 25°C*

10mA

50mA

T_J= 25°C

T_J= 125°C

Maximum Reverse

Recovery Time

Typical Junction

Capacitance

T_rr

C_J

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

Measured at

1.8ms

15pF

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 2%

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

中文翻译

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