Datasheet > GS1A_06

GS1A_06

更新时间： 2024-11-07 04:19:51

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	53K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE

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中文翻译

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GS1A_06 数据手册

WTE

POWER SEMICONDUCTORS

1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE

GS1A – GS1M

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Surge Overload Rating to 30A Peak

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-O

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E

SMA/DO-214AC

Mechanical Data

Dim

Min

2.50

4.00

1.20

0.152

4.80

2.00

0.051

0.76

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K GS1M

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current @T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j,T^STG

°C/W

°C

-65 to +175

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

GS1A – GS1M

1 of 4

12 3 4

中文翻译

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与GS1A_06相关器件

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GS1A_07	PANJIT	获取价格	SURFACE MOUNT RECTIFIER
GS1A_09	PANJIT	获取价格	SURFACE MOUNT RECTIFIER
GS1A_11	MCC	获取价格	1 Amp Silicon Rectifier 50 to 1000 Volts
GS1A_16	PINGWEI	获取价格	1.0AMP.GLASS PASSIVATED SURFACE MOUNT RECTIFIERS
GS1A1.1GOHMJ	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1100000000ohm, 3000V, 5% +/-Tol, 200ppm/Cel, T
GS1A1.1MOHMF	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1100000ohm, 3000V, 1% +/-Tol, 200ppm/Cel, Thro
GS1A1.1MOHMJ	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1100000ohm, 3000V, 5% +/-Tol, 200ppm/Cel, Thro
GS1A1.2GOHMJ	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1200000000ohm, 3000V, 5% +/-Tol, 200ppm/Cel, T
GS1A1.2GOHMK	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1200000000ohm, 3000V, 10% +/-Tol, 200ppm/Cel,
GS1A1.2MOHMJ	KOA	获取价格	Fixed Resistor, Metal Glaze/thick Film, 1W, 1200000ohm, 3000V, 5% +/-Tol, 200ppm/Cel, Thro

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