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GS-F8MB-SIMM PDF预览

GS-F8MB-SIMM

更新时间: 2024-11-30 19:19:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器内存集成电路
页数 文件大小 规格书
4页 45K
描述
8MX8 FLASH 5V PROM MODULE, 70ns, SMA80, SIMM-80

GS-F8MB-SIMM 技术参数

生命周期:Transferred零件包装代码:SIMM
包装说明:SIMM-80针数:80
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.75
最长访问时间:70 nsJESD-30 代码:R-XSMA-N80
内存密度:67108864 bit内存集成电路类型:FLASH MODULE
内存宽度:8功能数量:1
端子数量:80字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
组织:8MX8封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
端子形式:NO LEAD端子位置:SINGLE
类型:NOR TYPEBase Number Matches:1

GS-F8MB-SIMM 数据手册

 浏览型号GS-F8MB-SIMM的Datasheet PDF文件第2页浏览型号GS-F8MB-SIMM的Datasheet PDF文件第3页浏览型号GS-F8MB-SIMM的Datasheet PDF文件第4页 
GS-F8MB-SIMM  
8 MByte SIMM FLASH MEMORY MODULE  
PRELIMINARY DATA  
80 PINS JEDEC 21-C package  
FAST ACCESS TIME: 70ns  
80  
5V ± 10% SUPPLY VOLTAGE for PROGRAM  
and ERASE OPERATIONS  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATIONS  
BYTE PROGRAMMING TIME: 10µs typical  
ERASE TIME  
– Sector: 1.0 sec typical  
– Bulk: 2.5 sec typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
41  
40  
– Data Polling and Toggle Protocol for P/E.C.  
Status  
MEMORY ERASE in SECTORS  
– 8 Sectors of 64K Bytes each  
– Sector Protection  
– Multisector Erase  
ERASE SUSPEND and RESUME MODES  
100,000 PROGRAM/ERASE CYCLES per  
SECTOR  
1
Table 1. Signal Names  
DESCRIPTION  
A0-A18  
Address Inputs  
The GS-F8MB-SIMM is an 8 Mbyte SIMM memory  
module built around 16 x M29F040 FLASH mem-  
ory chips (please see relevant data sheet for all  
detailed informations about the chip perform-  
ances). The devices are mounted on a Jedec 21-C  
standardized SIMM printed circuit.  
DQ0-DQ31  
CE0-CE3  
OE  
Data Input / Outputs  
Chip Enable  
Output Enable  
WE0-WE3  
PD1-PD4  
PD5-PD7  
VCC-VSS  
Write Enable  
Organisation  
Presence & Module Type Detect  
Module Speed Detect  
Power Supply - Ground  
Figure 1 shows the block diagram. The FLASH  
module is organized as 16 x 512K x 8 bits with  
address lines A0-A18 and Data Inputs/Outputs  
DQ0 to 7, DQ8 to 15, DQ16 to 23 and DQ24 to 31.  
January 1997  
1/4  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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