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GSFA1603 PDF预览

GSFA1603

更新时间： 2024-11-21 00:58:11
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1118K
描述
16.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode

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中文翻译

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GSFA1603 数据手册

 浏览型号GSFA1603的Datasheet PDF文件第2页浏览型号GSFA1603的Datasheet PDF文件第3页 
GSFA1601 thru GSFA1607  
GSFA1601 thru GSFA1607  
Pb Free Plating Product  
16.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode  
ITO-220AC/TO-220F-2L  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Avalanche energy rated(100% guarantee)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
PhotoVoltaic BY-PASS DIODE  
ꢀ
ꢀ
ꢀ
PhotoVoltaic High-amperage Combiner Boxes  
Alternator(Automotive Wireharness/Capacitor Bank)  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: ITO-220AC fully plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Internal Configuration  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
K
A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
℃
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GSFA GSFA GSFA GSFA GSFA GSFA GSFA  
1601 1602 1603 1604 1605 1606 1607  
Type Number  
Symbol  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM 50  
VRMS 35  
100  
70  
200  
140  
200  
400  
280  
400  
16.0  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
A
Maximum DC Blocking Voltage  
VDC  
I(AV)  
50  
100  
℃
Maximum Average Forward Rectified @Tc = 120  
Peak Forward Surge Current, 8.3 ms Single Half Sine-  
wave Superimposed on Rated Load (JEDEC method )  
250  
IFSM  
VF  
A
V
Maximum Instantaneous Forward Voltage @ 16.0A  
1.1  
℃
Maximum DC Reverse Current @ TA=25  
5.0  
50  
IR  
uA  
pF  
℃
at Rated DC Blocking Voltage @ TA=125  
Typical Junction Capacitance (Note 1)  
100  
3.0  
Cj  
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
℃
/W  
RθJC  
TJ  
℃
℃
-65 to +150  
-65 to +150  
TSTG  
Note 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
2. Mount on P.C. Board with 2"x3" x0.25" Al-plate  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
123

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