Datasheet > GSFA6538

GSFA6538

更新时间： 2024-11-18 21:20:55

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	543K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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GSFA6538 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

GSFA6538 数据手册

GSFA6538

650V N-Channel MOSFET

Main Product Characteristics

BV_DSS

R_DS(ON)

I_D

650V

109mΩ

38A

TO-247

Schematic Diagram

Features and Benefits

Advanced MOSFET process technology

§ Ideal for high efficiency switched mode power supplies

§ Low on-resistance with low gate charge

§ Fast switching and reverse body recovery

Description

The GSFA6538 utilizes the latest techniques to achieve high cell density and low on-resistance. These

features make this device extremely efficient and reliable for use in high efficiency switch mode power supply

and a wide variety of other applications.

Absolute Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Drain-Source Voltage(V_GS=0V)

Gate-Source Voltage(V_DS=0V) AC (f>1 Hz)

Drain Current-Continuous(T_C=25°C)

Drain Current-Continuous(T_C=100°C)

Drain Current-Pulsed¹

Max.

Unit

Symbol

V_DS

650

±30

V_GS

I_D(DC)

152

I_DM

E_AS

I_AR

Single Pulse Avalanche Energy²

841

Avalanche Current¹

Repetitive Avalanche energy ，t_ARLimitedby

T_jmax

3.9

E_AR

Power Dissipation(T_C=25°C)

322

P_D

Power Dissipation-Derate Above 25°C

Drain Source Voltage Slope, V_DS≤480 V

Reverse Diode dv/dt，V_DS≤480 V, I_SD<I_D

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Storage Temperature Range

2.58

W/°C

V/ns

°C/W

°C

dv/dt

R_θJA

R_θJC

T_STG

T_J

0.39

-55 To +150

Operating Junction Temperature Range

°C

1/6

12 3 4 5 6

中文翻译

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