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GPP10B PDF预览

GPP10B

更新时间: 2024-01-27 11:26:46
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 302K
描述
1.0A plug-in rectifier diode 100V DO-41 series

GPP10B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.21
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:1000 V
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

GPP10B 数据手册

 浏览型号GPP10B的Datasheet PDF文件第2页 
GPP10A - GPP10M  
AXIAL LEADED SILICON RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
!
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
!
!
A
B
A
!
!
High Reliability  
High Surge Current Capability  
C
D
Mechanical Data  
Case:D O - 4 1 , Molded Plastic  
!
!
DO-41  
Min  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
Dim  
A
Max  
!
!
!
!
25.40  
4.06  
¾
B
5.21  
0.864  
2.72  
C
0.71  
Marking: Type Number  
D
2.00  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
@TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol GPP10A GPP10B GPP10DGPP10G GPP10J GPP10K GPP10M Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
I
O
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
FSM  
30  
A
Forward Voltage  
@IF = 1.0A  
V
FM  
1.0  
V
µA  
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 100°C  
@TA = 25°C  
5.0  
50  
I
RM  
Typical Junction Capacitance (Note 2)  
C
j
15  
50  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
R
JA  
K/W  
Operating Temperature Range  
Storage Temperature Range  
T
j
-65 to +125  
-65 to +150  
°C  
°C  
T
STG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  

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