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GPP10B/68 PDF预览

GPP10B/68

更新时间: 2024-11-29 10:23:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 130K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

GPP10B/68 数据手册

 浏览型号GPP10B/68的Datasheet PDF文件第2页浏览型号GPP10B/68的Datasheet PDF文件第3页 
GPP10A thru GPP10M  
New Product  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1000 V  
30 A  
5.0 µA  
VF  
1.1 V  
DO-204AL (DO-41)  
Tj max.  
150 °C  
Features  
Mechanical Data  
• Glass passivated chip junction  
Case: DO-204AL, molded epoxy over  
passivated chip  
• Low forward voltage drop  
Epoxy meets UL-94V-0 Flammability rating  
• Low leakage current, typical I less than 0.1 µA  
R
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GPP10A GPP10B GPP10D GPP10G GPP10J GPP10K GPP10M Unit  
* Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
* Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
V
V
A
* Maximum DC blocking voltage  
100  
1000  
* Maximum average forward rectified  
current 0.375" (9.5 mm) lead length at  
IF(AV)  
TA = 75 °C  
* Peak forward surge current 8.3 ms  
single half sine-wave superimposed on  
rated load  
IFSM  
30  
30  
A
* Maximum full load reverse current, full  
cycle average 0.375" (9.5 mm) lead  
length TA = 75 °C  
IR(AV)  
µA  
* Operating junction and storage  
temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88641  
15-Sep-05  
www.vishay.com  
1

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