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GP30B/90-E3 PDF预览

GP30B/90-E3

更新时间： 2024-11-13 06:31:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 289K
描述
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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GP30B/90-E3 数据手册

 浏览型号GP30B/90-E3的Datasheet PDF文件第2页浏览型号GP30B/90-E3的Datasheet PDF文件第3页浏览型号GP30B/90-E3的Datasheet PDF文件第4页 
GP30A thru GP30M  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifiers  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
50 V to 1000 V  
125 A  
5.0 µA  
*
d
VF  
1.2 V, 1.1 V  
175 °C  
e
t
n
e
t
Tj max.  
a
P
DO-201AD  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly by  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-201AD, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• Low leakage current, typical I less than 0.1µA  
R
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low forward voltage drop  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high voltage rectification of power supply,  
inverters, converters, freewheeling diodes and snub-  
ber circuit application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GP30A GP30B GP30D GP30G GP30J GP30K GP30M Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 55 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
125  
100  
A
Maximum full load reverse current, full cycle average  
0.375" (9.5 mm) lead length at TA = 55 °C  
IR(AV)  
µA  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88640  
13-Sep-05  
www.vishay.com  
1
1234

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与GP30B/90-E3相关器件

型号 品牌 获取价格 描述 数据表
GP30B/91 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GP30B/92-E3 VISHAY

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
GP30B-AP MCC

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD
GP30B-B FRONTIER

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
GP30B-BP MCC

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GP30BE3 VISHAY

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectif
GP30B-E3 VISHAY

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectif
GP30B-E3/4F VISHAY

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
GP30B-E3/4H VISHAY

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 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
GP30B-E3/60 VISHAY

获取价格

 		DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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