Datasheet > GN01081B

GN01081B

更新时间： 2024-10-28 22:32:51

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松下 - PANASONIC		/
页数	文件大小	规格书
2页	59K
描述
GaAs IC with built-in ferroelectric

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中文翻译

获取价格

数据手册

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GN01081B 数据手册

GaAs MMICs

GN01081B

GaAs IC (with built-in ferroelectric)

Driver amplifier for PCS

unit: mm

Part B

■ Features

● High output amplifier

● Low distortion

2-0.55±0.1

2~12˚

Detail of Part A & B

■ Absolute Maximum Ratings (Ta = 25°C)

Part A

Parameter

Power supply voltage

Circuit current

Symbol

V_DD

I_DD

Ratings

Unit

2.2±0.2

3.4±0.2

100

2~12˚

0.3±0.1

dBm

°C

Max input power

P_in

−5

1: NC

2: V_DD2

3: Source2 9: IN1

7: V_DD1

8: NC

Allowable power dissipation

P_D

450

4: IN2

5: NC

6: NC

10: NC

11: GND

12: GND

Operating ambient temperature T_opr

Storage temperature T_stg

−30 to +90

−40 to +120

°C

ESOF-10D Type Package

■ Electrical Characteristics (V_DD= 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C)

Parameter

Circuit current

Symbol Test method

Conditions

min

typ

max

Unit

I_DD

(1)

(2)

(1)

(2)

Power gain

Adjacent channel

leakage power (ACP) 1

Adjacent channel

leakage power (ACP) 2

IS − 95 modulation, ±1.25MHz Detuning

30kHz Bandwidth

ACP1

ACP2

−56

−71

−51

−66

dBc

IS − 95 modulation, ±2.25MHz Detuning

30kHz Bandwidth

Test method (1): Measurement circuit is shown in the following diagram.

(2): This item is the sampling guaranteed item.

■ Measurement Circuit

V_DD1

100pF+1000pF

5.6nH

2pF

20Ω

5.6nH

150Ω

2pF

10 9

1.5nH

1pF

33pF

OUT

100pF

33nH

10Ω

100pF+47nF

V_DD2

中文翻译

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