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GMZJ51 PDF预览

GMZJ51

更新时间: 2024-11-25 03:39:39
品牌 Logo 应用领域
强茂 - PANJIT 二极管齐纳二极管测试
页数 文件大小 规格书
5页 159K
描述
SURFACE MOUNT ZENER DIODES

GMZJ51 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.77
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
标称参考电压:51 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5.88%工作测试电流:5 mA
Base Number Matches:1

GMZJ51 数据手册

 浏览型号GMZJ51的Datasheet PDF文件第2页浏览型号GMZJ51的Datasheet PDF文件第3页浏览型号GMZJ51的Datasheet PDF文件第4页浏览型号GMZJ51的Datasheet PDF文件第5页 
DATA SHEET  
GMZJ2.0~GMZJ56  
SURFACE MOUNT ZENER DIODES  
Unit : inch (mm)  
MICRO-MELF  
VOLTAGE  
POWER  
500 mWatts  
2.0 to 56 Volts  
FEATURES  
• Planar Die construction  
• 500mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
Pb free: 98.5% Sn above  
.008(0.2)  
.043(1.1)  
.008(0.2)  
MECHANICAL DATA  
.079(2.0)  
.071(1.8)  
• Case: Molded Glass MICRO-MELF  
• Terminals: Solderable per MIL-STD-202E, Method 208  
• Polarity: See Diagram Below  
• Approx. Weight: 0.01 grams  
• Mounting Position: Any  
Packing information  
T/R - 2.5K per 7" plastic Reel  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Power Dissipation at Tamb = 25 OC  
Symbol  
Value  
500  
Units  
mW  
P
TOT  
Junction Temperature  
175  
OC  
OC  
T
J
Storage Temperature Range  
-65 to +175  
TS  
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  
Parameter  
Symbol  
RthA  
Min.  
--  
Typ.  
--  
Max.  
Units  
Thermal Resistance Junction to Ambient Air  
0.3  
1
K/mW  
Forward Voltage at IF = 100mA  
--  
V
VF  
--  
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  
STAD-SEP.14.2004  
PAGE . 1  

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