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GMZJ9.1A PDF预览

GMZJ9.1A

更新时间: 2024-10-28 13:07:59
品牌 Logo 应用领域
RECTRON 二极管齐纳二极管
页数 文件大小 规格书
3页 45K
描述
Zener Diode, 8.51V V(Z), 2.59%, 0.5W, Silicon, Unidirectional, MICROMELF-2

GMZJ9.1A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.57
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:25 ΩJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:8.51 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:MATTE TIN端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.59%工作测试电流:5 mA
Base Number Matches:1

GMZJ9.1A 数据手册

 浏览型号GMZJ9.1A的Datasheet PDF文件第2页浏览型号GMZJ9.1A的Datasheet PDF文件第3页 
RECTRON  
GMZJ  
Series  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
Micro MELF ZENER DIODE 2ꢀ5% 500mW  
Micro MELF  
0.049(1.25)  
0.047(1.20)  
0.008(0.2)  
0.079(2.0)  
0.071(1.8)  
Units in mm  
Absolute Maximun Ratings (Ta=25oC)  
Symbol  
Value  
Unit  
mW  
Zener Current see Table "Characteristics"  
Power Dissipation at Tamb=25  
Junction Temperature  
Ptot  
Tj  
500*  
175  
Storage Temperature Range  
Ts  
-65 to +175  
Characteristic at Tamb=25  
Symbol  
Min.  
_
Typ.  
_
Max.  
0.3*  
Unit  
K/mW  
Thermal Resistance  
Junction to Ambient Air  
Forward Voltage  
RthA  
VF  
_
_
V
1
at IF=100mA  
*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.  

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