Datasheet > GM71VS18163CLT-7

GM71VS18163CLT-7

更新时间： 2022-01-18 22:10:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
11页	115K
描述
x16 EDO Page Mode DRAM

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数据手册

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GM71VS18163CLT-7 数据手册

GM71V18163C

GM71VS18163CL

Pin Description

A0-A9

Function

Address Inputs

Read/Write Enable

A0-A9

Refresh Address Inputs

Data-In/Out

Output Enable

Power (+3.3V)

Ground

I/O0-I/O15

RAS

Row Address Strobe

Column Address Strobe

UCAS, LCAS

No Connection

Ordering Information

Type No.

Access Time

Package

GM71V(S)18163CJ/CLJ -5

GM71V(S)18163CJ/CLJ -6

GM71V(S)18163CJ/CLJ -7

50ns

60ns

70ns

400 Mil

42 Pin

Plastic SOJ

GM71V(S)18163CT/CLT -5

GM71V(S)18163CT/CLT -6

GM71V(S)18163CT/CLT -7

50ns

60ns

70ns

400 Mil

44(50) Pin

Plastic TSOP II

Absolute Maximum Ratings*

Symbol

Parameter

Rating

0 ~ 70

Unit

Ambient Temperature under Bias

Storage Temperature

-55 ~ 125

TSTG

-0.5 ~ Vcc+0.5

(<=4.6V(MAX))

Voltage on any Pin Relative to VSS

VIN/OUT

Supply Voltage Relative to VSS

Short Circuit Output Current

Power Dissipation

-0.5 ~ 4.6

VCC

IOUT

1.0

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

Rev 0.1 / Apr’01

123 4 5 6 7...11

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