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GM71VS65403ALJ-5 PDF预览

GM71VS65403ALJ-5

更新时间: 2024-02-06 05:22:58
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
25页 397K
描述
x4 EDO Page Mode DRAM

GM71VS65403ALJ-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.83
访问模式:FAST PAGE WITH EDO最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATIONI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
内存密度:67108864 bit内存集成电路类型:EDO DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:32
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES最大待机电流:0.0003 A
子类别:DRAMs最大压摆率:0.19 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GM71VS65403ALJ-5 数据手册

 浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第2页浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第3页浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第4页浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第5页浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第6页浏览型号GM71VS65403ALJ-5的Datasheet PDF文件第7页 
GM71V65403A  
GM71VS65403AL  
16,777,216 WORDS x 4 BIT  
CMOS DYNAMIC RAM  
LG Semicon Co.,Ltd.  
Description  
Pin Configuration  
32 SOJ / TSOP II  
The GM71V(S)65403A/AL is the new generation  
dynamic RAM organized 16,777,216 words by 4bits.  
The GM71V(S)65403A/AL utilizes advanced CMOS  
Silicon Gate Process Technology as well as  
advanced circuit techniques for wide operating  
margins, both internally and to the system user.  
System oriented features include single power supply  
of 3.3V+/-10% tolerance, direct interfacing  
capability with high performance logic families such  
as Schottky TTL.  
1
2
3
32  
31  
VSS  
IO3  
VCC  
IO0  
IO1  
NC  
30  
IO2  
NC  
4
5
29  
28  
27  
26  
NC  
NC  
NC  
6
7
VSS  
VCC  
/CAS  
The GM71V(S)65403A/AL offers Extended Data  
Out(EDO) Mode as a high speed access mode.  
8
9
25  
24  
/OE  
NC  
/WE  
/RAS  
Features  
10  
A0  
23 A11  
* 16,777,216 Words x 4 Bit  
* Extended Data Out (EDO) Mode Capability  
* Fast Access Time & Cycle Time  
22  
11  
12  
A10  
A1  
A2  
A3  
A9  
A8  
21  
20  
13  
14  
15  
(Unit: ns)  
A4  
A5  
19  
18  
A7  
A6  
t
RAC  
50  
t
AA  
t
CAC  
t
RC  
t
HPC  
84  
20  
25  
25  
30  
13  
15  
GM71V(S)65403A/AL-5  
GM71V(S)65403A/AL-6  
16  
VSS  
17  
VCC  
104  
60  
(Top View)  
*Power dissipation  
- Active : 684mW/612mW(MAX)  
- Standby : 1.8 mW ( CMOS level : MAX )  
0.54mW ( L-Version : MAX)  
*EDO page mode capability  
*Access time : 50ns/60ns (max)  
*Refresh cycles  
- RAS only Refresh  
§Â  
4096 cycles/64  
(GM71V65403A)  
§Â  
4096 cycles/128 (GM71VS65403AL)(L_Version)  
*CBR & Hidden Refresh  
§Â  
4096 cycles/64  
(GM71V65403A)  
§Â  
4096 cycles/128  
*4 variations of refresh  
-RAS-only refresh  
(GM71VS65403AL)( L-Version )  
-CAS-before-RAS refresh  
-Hidden refresh  
-Self refresh (L-Version)  
*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator  
*Battery Back Up Operation ( L-Version )  
1

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