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GM71VS65803ALJ-6 PDF预览

GM71VS65803ALJ-6

更新时间: 2024-01-30 09:05:27
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
25页 398K
描述
x8 EDO Page Mode DRAM

GM71VS65803ALJ-6 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SOJ, SOJ32,.44Reach Compliance Code:compliant
风险等级:5.81最长访问时间:60 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:8
端子数量:32字数:8388608 words
字数代码:8000000最高工作温度:70 °C
最低工作温度:组织:8MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:YES
最大待机电流:0.0003 A子类别:DRAMs
最大压摆率:0.175 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

GM71VS65803ALJ-6 数据手册

 浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第2页浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第3页浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第4页浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第5页浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第6页浏览型号GM71VS65803ALJ-6的Datasheet PDF文件第7页 
GM71V65803A  
GM71VS65803AL  
8,388,608 WORDS x 8 BIT  
CMOS DYNAMIC RAM  
LG Semicon Co.,Ltd.  
Description  
Pin Configuration  
32 SOJ / TSOP II  
The GM71V(S)65803A/AL is the new generation  
dynamic RAM organized 8,388,608 words by 8bits.  
The GM71V(S)65803A/AL utilizes advanced CMOS  
Silicon Gate Process Technology as well as  
advanced circuit techniques for wide operating  
margins, both internally and to the system user.  
System oriented features include single power supply  
of 3.3V+/-10% tolerance, direct interfacing  
capability with high performance logic families such  
as Schottky TTL.  
1
2
3
32  
31 IO7  
VSS  
VCC  
IO0  
IO1  
IO2  
IO3  
NC  
30  
IO6  
4
5
6
7
29  
28  
27  
26  
IO5  
IO4  
VSS  
VCC  
/CAS  
The GM71V(S)65803A/AL offers Extended Data  
Out (EDO) Mode as a high speed access mode.  
25  
8
9
/OE  
/WE  
/RAS  
24 NC  
23 A11  
22 A10  
Features  
10  
A0  
* 8,388,608 Words x 8 Bit  
* Extended Data Out (EDO) Mode Capability  
* Fast Access Time & Cycle Time  
11  
12  
13  
A1  
A2  
A3  
A9  
21  
A8  
20  
(Unit: ns)  
14  
15  
A4  
A5  
19  
18  
A7  
A6  
t
RAC  
50  
t
AA  
t
CAC  
t
RC  
t
HPC  
84  
GM71V(S)65803A/AL-5  
GM71V(S)65803A/AL-6  
20  
25  
25  
30  
13  
15  
16  
17 VSS  
VCC  
104  
60  
(Top View)  
*Power dissipation  
- Active : 702mW/630mW(MAX)  
- Standby : 1.8 mW ( CMOS level : MAX )  
0.54mW ( L-Version : MAX)  
*EDO page mode capability  
*Access time : 50ns/60ns (max)  
*Refresh cycles  
- RAS only Refresh  
§Â  
4096 cycles/64  
(GM71V65803A)  
§Â  
4096 cycles/128 (GM71VS65803AL)(L_Version)  
*CBR & Hidden Refresh  
§Â  
4096 cycles/64  
(GM71V65803A)  
§Â  
4096 cycles/128  
*4 variations of refresh  
-RAS-only refresh  
(GM71VS65803AL)( L-Version )  
-CAS-before-RAS refresh  
-Hidden refresh  
-Self refresh (L-Version)  
*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator  
*Battery Back Up Operation ( L-Version )  
1

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