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GM71V64400CJ-7 PDF预览

GM71V64400CJ-7

更新时间: 2024-01-12 13:59:18
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
9页 97K
描述
x4 Fast Page Mode DRAM

GM71V64400CJ-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92Is Samacsys:N
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:21.02 mm内存密度:67108864 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:8192座面最大高度:3.76 mm
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

GM71V64400CJ-7 数据手册

 浏览型号GM71V64400CJ-7的Datasheet PDF文件第2页浏览型号GM71V64400CJ-7的Datasheet PDF文件第3页浏览型号GM71V64400CJ-7的Datasheet PDF文件第4页浏览型号GM71V64400CJ-7的Datasheet PDF文件第5页浏览型号GM71V64400CJ-7的Datasheet PDF文件第6页浏览型号GM71V64400CJ-7的Datasheet PDF文件第7页 
GM71V64400C  
16,777,216 WORDS x 4 BIT  
CMOS DYNAMIC RAM  
Description  
Pin Configuration  
32 SOJ / TSOP II  
The GM71V64400C is the second generation  
dynamic RAM organized 16,777,216 words by 4  
bits. The GM71V64400C utilizes 0.35um  
CMOS Silicon Gate Process Technology as well  
as advanced circuit techniques for wide  
operating margins, both internally and to the  
system user. System oriented features include  
single power supply of 3.3V¡ 0¾.3V tolerance,  
direct interfacing capability with high  
performance logic families such as Schottky  
TTL.  
1
2
3
32  
V
SS  
V
CC  
31  
30  
I/O3  
I/O2  
NC  
I/O0  
I/O1  
NC  
4
5
6
7
29  
28  
27  
26  
NC  
NC  
NC  
V
SS  
V
CC  
CAS  
8
9
25  
24  
OE  
WE  
The GM71V64400C offers Fast Page Mode as  
a high speed access mode.  
RAS  
A12  
10  
A0  
23  
22  
A11  
A10  
A9  
11  
12  
A1  
A2  
A3  
21  
20  
Features  
A8  
13  
14  
15  
• 16,777,216 Words x 4 Bit  
• Fast Page Mode Capability  
• Fast Access Time & Cycle Time  
A4  
A5  
19  
18  
A7  
A6  
17  
16  
V
SS  
V
CC  
(Unit: ns)  
tRAC  
tAA  
tCAC  
tRC  
tPC  
(Top View)  
90  
110  
130  
35  
40  
45  
50  
60  
70  
25  
30  
35  
13  
15  
GM71V64400C-5  
GM71V64400C-6  
18  
GM71V64400C-7  
• Low Power  
- Active : 432 mW / 396 mW / 360 mW (MAX)  
- Standby : 3.6 mW ( CMOS level :MAX )  
• RAS Only Refresh, CAS before RAS Refresh,  
Hidden Refresh Capability  
• LVTTL  
• 8192 Refresh Cycles/64 ms  
• Single Power Supply of 3.3V¡ 0¾.3V  
with a built-in VBB generator  
Rev 0.1 / Apr’01  
* This Data Sheet is subject to change without notice.  
1

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