5秒后页面跳转
GM71V64803AT-6 PDF预览

GM71V64803AT-6

更新时间: 2022-01-21 23:18:00
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
25页 397K
描述
x8 EDO Page Mode DRAM

GM71V64803AT-6 数据手册

 浏览型号GM71V64803AT-6的Datasheet PDF文件第2页浏览型号GM71V64803AT-6的Datasheet PDF文件第3页浏览型号GM71V64803AT-6的Datasheet PDF文件第4页浏览型号GM71V64803AT-6的Datasheet PDF文件第5页浏览型号GM71V64803AT-6的Datasheet PDF文件第6页浏览型号GM71V64803AT-6的Datasheet PDF文件第7页 
GM71V64803A  
GM71VS64803AL  
8,388,608 WORDS x 8 BIT  
CMOS DYNAMIC RAM  
LG Semicon Co.,Ltd.  
Description  
Pin Configuration  
32 SOJ / TSOP II  
The GM71V(S)64803A/AL is the new generation  
dynamic RAM organized 8,388,608 words by 8bits.  
The GM71V(S)64803A/AL utilizes advanced CMOS  
Silicon Gate Process Technology as well as  
advanced circuit techniques for wide operating  
margins, both internally and to the system user.  
System oriented features include single power supply  
of 3.3V+/-10% tolerance, direct interfacing  
capability with high performance logic families such  
as Schottky TTL.  
1
2
3
32  
VSS  
IO7  
VCC  
IO0  
31  
30  
IO1  
IO2  
IO3  
NC  
IO6  
4
5
29  
28  
27  
26  
IO5  
IO4  
6
7
VSS  
VCC  
/CAS  
The GM71V(S)64803A/AL offers Extended Data  
Out(EDO) Mode as a high speed access mode.  
8
9
25  
24  
/OE  
A12  
/WE  
/RAS  
Features  
10  
A0  
23 A11  
*8,388,608 Words x 8 Bit  
* Extended Data Out(EDO) Mode Capability  
* Fast Access Time & Cycle Time  
22  
11  
12  
A10  
A1  
A2  
A3  
A9  
A8  
21  
20  
13  
14  
15  
(Unit: ns)  
A4  
A5  
19  
18  
A7  
A6  
t
RAC  
50  
t
AA  
t
CAC  
t
RC  
t
HPC  
84  
20  
25  
25  
30  
13  
15  
GM71V(S)64803A/AL-5  
GM71V(S)64803A/AL-6  
16  
VSS  
17  
VCC  
104  
60  
(Top View)  
*Power dissipation  
- Active : 522mW/450mW(MAX)  
- Standby : 1.8 mW ( CMOS level : MAX )  
0.54mW ( L-Version : MAX)  
*EDO page mode capability  
*Access time : 50ns/60ns (max)  
*Refresh cycles  
- RAS only Refresh  
§Â  
8192 cycles/64  
(GM71V64803A)  
§Â  
8192 cycles /128 (GM71VS64803AL)(L_Version)  
*CBR & Hidden Refresh  
§Â  
4096 cycles/64  
(GM71V64803A)  
§Â  
4096 cycles/128  
*4 variations of refresh  
-RAS-only refresh  
(GM71VS64803AL)( L-Version )  
-CAS-before-RAS refresh  
-Hidden refresh  
-Self refresh (L-Version)  
*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator  
*Battery Back Up Operation ( L-Version )  
1

与GM71V64803AT-6相关器件

型号 品牌 描述 获取价格 数据表
GM71V64803C(CL) ETC 8Mx8|3.3V|8K|5/6|FP/EDO DRAM - 64M

获取价格

GM71V64803CJ-5 ETC x8 EDO Page Mode DRAM

获取价格

GM71V64803CJ-6 ETC x8 EDO Page Mode DRAM

获取价格

GM71V64803CLJ-5 HYNIX EDO DRAM, 8MX8, 50ns, CMOS, PDSO32,

获取价格

GM71V64803CLT-5 HYNIX EDO DRAM, 8MX8, 50ns, CMOS, PDSO32,

获取价格

GM71V64803CT-5 ETC x8 EDO Page Mode DRAM

获取价格