Datasheet > GM2306

GM2306

更新时间： 2024-02-16 19:49:32

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	234K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GM2306 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/20

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

32mꢀ

5.3A

GM2306

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The GM2306 is universally used for all commercial-industrial surface mount applications.

Features

*Capable of 2.5V gate drive

*Lower on-resistance

Package Dimensions

SOT-89

Millimeter

Min. Max.

3.00 REF.

1.50 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5° TYP.

0.70 REF.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

±12

Gate-Source Voltage

V_GS

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current^1,2

I_D@T

=25к

=70к

5.3

4.3

I_DM

Power Dissipation

P_D@T

A=25к

1.5

Linear Derating Factor

0.012

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Value

83.3

Unit

к/W

Thermal Resistance Junction-ambient³Max.

GM2306

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