Datasheet > GM2222A

GM2222A

更新时间： 2024-02-26 06:02:27

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	189K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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GM2222A 数据手册

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GM2222A

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

he GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.

Package Dimensions

SOT-89

Millimeter

Min.

3.00 REF.

1.50 REF.

0.40

1.40

0.35

5q TYP.

REF.

Min.

4.4

Max.

4.6

Max.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.52

1.60

0.41

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

VCBO

VCEO

VEBO

6.0

600

1.2

Total Power Dissipation

Characteristics at Ta = 25ć

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=10uA

IC=10mA

IE=10uA

VCB=60V

BVCEO

BVEBO

ICBO

300

ICEX

VCB=60V,VEB(off)=3V

VEB=3V

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V, IC=100uA

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=150mA

VCE=10V, IC=500mA

VCE=1V, IC=150mA

VCE=20V, IC=20mA, f=100MHz

1.2

100

300

hFE2

hFE3

hFE4

300

hFE5

hFE6

MHz

GTM Product Specification

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