Datasheet > GL41J-HE3

GL41J-HE3

更新时间： 2024-12-01 08:26:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	326K
描述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GL41J-HE3 数据手册

BYM10-50 thru BYM10-1000, GL41A thru GL41Y

Vishay General Semiconductor

Surface Mount Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

1.0 A

BYM-50-1000

GL41A-Y

50 V to 1000 V

50 V to 1600 V

V_RRM

I_FSM

I_R

30 A

10 µA

V_F

1.1 V, 1.2 V

175 °C

T_jmax.

*Glass-plastic encapsulation

is covered by

DO-213AB

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for high reliability

condition

Case: DO-213AB, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Patented glass-plastic encapsulation technique

• Ideal for automated placement

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Two bands indicate cathode end - 1st band

denotes device type and 2nd band denotes repetitive

peak reverse voltage rating

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

for consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol BYM

BYM

Unit

10-50 10-100 10-200 10-400 10-600 10-800 M10-1000

Standard recovery device: 1st

band is white

41A

41B

41D

41G

41J

41K

41M

41T

41Y

Polarity color bands (2nd Band)

Gray

Red

100

Orange Yellow Green

Blue

800

Violet

1000

White Brown

Maximum repetitive peak reverse

voltage

V_RRM

200

400

600

1300

1600

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

1.0

560

800

700

910

1120

1600

Maximum DC blocking voltage

100

1000

1300

Maximum average forward

rectified current (See Fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms

single half sine-wave

superimposed on rated load

I_FSM

Maximum full load reverse current

full cycle average at T_A= 75 °C

I_R(AV

)

µA

°C

Operating junction and storage

temperature range

T_J,T_STG

- 65 to + 175

Document Number 88546

07-Oct-05

www.vishay.com

12 3 4

中文翻译

下载PDF

与GL41J-HE3相关器件

型号	品牌	获取价格	描述	数据表
GL41JHE3/96	VISHAY	获取价格	Surface Mount Glass Passivated Junction Rectifier
GL41J-HE3/96	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
GL41JHE3/97	VISHAY	获取价格	Surface Mount Glass Passivated Junction Rectifier
GL41J-HE3/97	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign
GL41JHE396	VISHAY	获取价格	Surface Mount Glass Passivated Junction Rectifier
GL41JHE397	VISHAY	获取价格	Surface Mount Glass Passivated Junction Rectifier
GL41K	BL Galaxy Electrical	获取价格	SURFACE MOUNT RECTIFIER
GL41K	TAITRON	获取价格	1.0A Surface Mount Glass Passivated Rectifier
GL41K	VISHAY	获取价格	SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
GL41K	LGE	获取价格	Surface Mount Rectifiers

与GL41J-HE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

GL41J-HE3

GL41J-HE3 数据手册

与GL41J-HE3相关器件

与GL41J-HE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GL41J-HE3

GL41J-HE3 数据手册

与GL41J-HE3相关器件

与GL41J-HE3相关文章

您还可以找

您在本页遇到什么问题？