是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | MELF-2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.6 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-213AB | JESD-30 代码: | O-PELF-R2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大重复峰值反向电压: | 800 V |
表面贴装: | YES | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GL41K/76 | VISHAY |
获取价格 |
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-213AB, PLASTIC PACKAGE-2 | |
GL41K-E3 | VISHAY |
获取价格 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Di | |
GL41K-E3/96 | VISHAY |
获取价格 |
DIODE GEN PURP 800V 1A DO213AB | |
GL41K-E3/97 | VISHAY |
获取价格 |
DIODE GEN PURP 800V 1A DO213AB | |
GL41K-HE3 | VISHAY |
获取价格 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC PACKAGE-2, Signal Di | |
GL41KHE3/96 | VISHAY |
获取价格 |
DIODE GEN PURP 800V 1A DO213AB | |
GL41K-HE3/96 | VISHAY |
获取价格 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign | |
GL41KHE3/97 | VISHAY |
获取价格 |
DIODE GEN PURP 800V 1A DO213AB | |
GL41K-HE3/97 | VISHAY |
获取价格 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC PACKAGE-2, Sign | |
GL41M | LGE |
获取价格 |
Surface Mount Rectifiers |