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GI812/54-E3 PDF预览

GI812/54-E3

更新时间： 2024-11-07 18:32:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 328K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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中文翻译

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GI812/54-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-15
包装说明：PLASTIC, DO-15, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.71
Base Number Matches：1

GI812/54-E3 数据手册

 浏览型号GI812/54-E3的Datasheet PDF文件第2页浏览型号GI812/54-E3的Datasheet PDF文件第3页浏览型号GI812/54-E3的Datasheet PDF文件第4页 
GI810 thru GI818  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
50 V to 1000 V  
30 A  
750 ns  
*
IR  
10 µA  
d
e
t
n
e
VF  
1.2 V  
t
a
P
DO-204AC (DO-15)  
Tj max.  
175 °C  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
condition  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For general purpose of medium frequency rectifica-  
tion  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol GI810 GI811 GI812 GI814 GI816 GI817 GI818 Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 75 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number 88628  
12-Oct-05  
www.vishay.com  
1
1234

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
GI812/65-E3 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
GI812/68 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
GI812/70 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
GI812/70-E3 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
GI812/71-E3 VISHAY

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 		DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

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