Datasheet > GI750/62-E3

GI750/62-E3

更新时间： 2024-10-29 05:07:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	334K
描述
DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

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GI750/62-E3 数据手册

GI750 thru GI758

Vishay General Semiconductor

High Current Axial Plastic Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

V_F

6.0 A

50 V to 800 V

400 A

0.9 V, 0.95 V

5.0 µA

I_R

T_jmax.

150 °C

Case Style P600

Features

Mechanical Data

• Low forward voltage drop

Case: P600, void-free molded epoxy body

• Low leakage current, I less than 0.1µA

Epoxy meets UL-94V-0 Flammability rating

• High forward current capability

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

Polarity: Color band denotes cathode end

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

application.

(Note: These devices are not Q101 qualified. There-

fore, the devices specified in this datasheet have not

been designed for use in automotive or Hi-Rel appli-

cations.)

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

GI750 GI751 GI752 GI754 GI756 GI758

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

200

140

200

240

400

280

400

480

600

420

600

720

800

560

Maximum RMS voltage

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

100

120

800

V_RSM

I_F(AV)

1200

Maximum average forward rectified current at T_A= 60 °C,

P.C.B. mounting (fig. 1) T_L= 60 °C, 0.125" (3.18 mm) lead

length (fig. 2)

6.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

400

Operating junction and storage temperature range

T_J,T_STG

- 50 to + 150

°C

Document Number 88627

30-Aug-05

www.vishay.com

12 3 4

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