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GF1J-HE3/67A PDF预览

GF1J-HE3/67A

更新时间： 2024-02-07 04:31:38
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 77K
描述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA, ROHS COMPLIANT, PLASTIC, GF1, 2 PIN, Signal Diode

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GF1J-HE3/67A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214BA
包装说明：ROHS COMPLIANT, PLASTIC, GF1, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.59
Base Number Matches：1

GF1J-HE3/67A 数据手册

 浏览型号GF1J-HE3/67A的Datasheet PDF文件第2页浏览型号GF1J-HE3/67A的Datasheet PDF文件第3页浏览型号GF1J-HE3/67A的Datasheet PDF文件第4页 
GF1A thru GF1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Ideal for automated placement  
• Low forward voltage drop  
SUPERECTIFIER®  
DO-214BA (GF1)  
• Low leakage current  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
250 °C  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: DO-214BA, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
VRRM  
IFSM  
VF  
50 V to 1000 V  
30 A  
1.1 V, 1.2 V  
5.0 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IR  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TJ max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT  
Device marking code  
GA  
50  
35  
50  
GB  
100  
70  
GD  
200  
140  
200  
GG  
400  
280  
400  
1.0  
GJ  
600  
420  
600  
GK  
800  
560  
800  
GM  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 125 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number: 88617  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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