Datasheet > GF1M

GF1M

更新时间： 2024-01-10 10:33:43

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	89K
描述
Low forward voltage drop, High current capability

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GF1M 数据手册

Product specification

GF1A - GF1M

Features

Low forward voltage drop.

High current capability.

Easy pick and place.

High surge current capability.

Maximum Ratings And Electrical Characteristics at 25

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit

V^RRM

V^RMS

V^DC

100

200

140

200

400

280

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

400

1.0

100

I^(AV)

Maximum Average Forward Rectified Current,at T^L=75

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current T^A=25

I^FSM

V^F

30.0

1.0

1.2

5.0

50.0

2.0

I^R

at Rated DC Blocking Voltage T^A=125

T^RR

C^J

Maximum Reverse Recovery Time(Note 1) T^J=25

Typical Junction Capacitance (Note 2)

Maximum Thermal Resistance(Note 3) R ^JA

Operating and Storage Temperature Range

R JA

-55 to +150

T^J,T^STG

Note 1. Reverse Recovery Test Conditions: I^F=0.5A, I^R=1.0A, I^rr=0.25A

2. Measured at 1 MHz and applied Vr = 4.0 V.

3. 8.0 mm²( .013mm thick ) land areas.

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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