Datasheet > GF1M

GF1M

更新时间： 2024-11-15 12:24:51

品牌	Logo	应用领域
鲁光 - LGE		二极管光电二极管
页数	文件大小	规格书
2页	1520K
描述
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

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中文翻译

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数据手册

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GF1M 数据手册

GF1A - GF1M

GLASS PASSIVATED JUNCTION

SILICON SURFACE MOUNT

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

SMA (DO-214AC)

FEATURES :

* Glass passivated chip

* High current capability

* High reliability

1.1 ± 0.3

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.2 0.2

2.1 ± 0.2

2.6 ± 0.15

MECHANICAL DATA :

* Case : SMA Molded plastic

2.0 ± 0.2

* Epoxy : UL94V-O rate flame retardant

* Lead : Lead Formed for Surface Mount

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in millimeter

* Weight : 0.067 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratin at 25 °C ambient tem erature unless otherwise s ecifi .

Sin le hase, half wave, 60 Hz, resistive or inductive loa

For ca acitive load, derate current b 20

RATING

SYMBOL

UNIT

GF1A GF1B GF1D GF1G GF1J GF1K GF1M

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

V^RMS

V^DC

100

200

140

200

400

280

400

1.0

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

100

I^F(AV)

Maximum Average Forward Current Ta = 75 °C

Peak Forward Surge Current

I^FSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I^F= 1.0 Amp.

I^R

1.0

5.0

2.0

Maximum DC Reverse Current Ta = 25 °C

μA

μs

°C

I^R(H)

Trr

at rated DC Blocking Voltage

Ta = 100 °C

Typical Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance (Note2)

Junction Temperature Range

C^J

T^J

- 65 to + 150

Storage Temperature Range

T^STG

Notes :

(1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

http://www.luguang.cn

Email:lge@luguang.cn

中文翻译

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