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GF1M

更新时间： 2024-11-15 12:56:59
品牌 Logo 应用领域
森美特 - SUNMATE 二极管光电二极管
页数 文件大小 规格书
2页 335K
描述
1A patch rectifier diode 1000V SMA series

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中文翻译

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GF1M 数据手册

 浏览型号GF1M的Datasheet PDF文件第2页 
GF1A - GF1M  
SURFACE MOUNT SILICON RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
!
!
!
!
Ideal for surface mount automotive applications  
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
Capable of meeting environmental standards of  
!
!
B
SMA(DO-214AC)  
High temperature soldering guaranteed: 450°C/5 seconds  
at terminals  
Dim  
MinMax  
!
Complete device submersible temperature of 265°C for  
10 seconds in solder bath  
A
B
C
D
E
G
H
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
A
J
C
Mechanical Data  
D
!
!
Case SMA(DO-214AC)Molded Plastic  
Polarity: lndicated by cathode band  
Weight: 0.002ounces,0.053grams  
Mountingposition: Any  
!
!
G
H
E
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
TA = 25ꢀC unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
GF1A GF1B GF1D GF1G GF1J GF1K GF1M  
Characteristic  
Unit  
Maximum repetitive peak reverse voltage  
V
V
50  
100  
200  
400  
600  
800  
1000  
Volts  
RRM  
Maximum RMS voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Volts  
Volts  
RMS  
Maximum DC blocking voltage  
V
100  
1000  
DC  
Maximum average forward rectified current  
I
1.0  
Amp  
(AV)  
at T =125°C  
L
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
30.0  
1.10  
Amps  
FSM  
Maximum instantaneous forward voltage at 1.0A  
V
F
1.20  
Volts  
Maximum DC reverse current  
at rated DC blocking voltage  
T =25°C  
T =125°C  
A
5.0  
50.0  
A
I
µA  
R
Typical reverse recovery time  
t
2.0  
15.0  
µs  
(NOTE 1)  
(NOTE 2)  
rr  
Typical junction capacitance  
Typical thermal resistance  
C
pF  
J
R
R
80.0  
ΘJA  
(NOTE 3)  
°C/W  
°C  
26.0  
ΘJL  
Operating junction and storage temperature range  
T , T  
-65 to +175  
J
STG  
NOTES:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(2) Measured at 1.0 MHz and applied VR=4.0 Volts  
(3) Thermal resistance from junction to ambient and from junction to lead  
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas  
www.sunmate.tw  
1 of 2  
12

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