Datasheet > GE28F640C3TD70

GE28F640C3TD70

更新时间： 2024-11-25 03:39:11

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
68页	1132K
描述
Advanced+ Boot Block Flash Memory (C3)

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GE28F640C3TD70 数据手册

Intel Advanced+ Boot Block Flash

Memory (C3)

28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)

Datasheet

Product Features

■ Flexible SmartVoltage Technology

—2.7 V– 3.6 V Read/Program/Erase

—12 V for Fast Production Programming

■ 128-bit Protection Register

—64 bit Unique Device Identifier

—64 bit User Programmable OTP Cells

■ 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

■ Extended Cycling Capability

—Minimum 100,000 Block Erase Cycles

—Reduces Overall System Power

■ Software

■ High Performance

—Intel^®Flash Data Integrator (FDI)

—Supports Top or Bottom Boot Storage,

Streaming Data (e.g., voice)

—Intel Basic Command Set

—Common Flash Interface (CFI)

—2.7 V– 3.6 V: 70 ns Max Access Time

■ Optimized Architecture for Code Plus

Data Storage

—Eight 4 Kword Blocks, Top or Bottom

Parameter Boot

■ Standard Surface Mount Packaging

—48-Ball µBGA*/VFBGA

—Up to One Hundred-Twenty-Seven 32

Kword Blocks

—Fast Program Suspend Capability

—Fast Erase Suspend Capability

—64-Ball Easy BGA Packages

—48-Lead TSOP Package

■ ETOX™ VIII (0.13 µm) Flash

■ Flexible Block Locking

Technology

—Lock/Unlock Any Block

—Full Protection on Power-Up

—WP# Pin for Hardware Block Protection

—16, 32 Mbit

■ ETOX™ VII (0.18 µm) Flash Technology

—16, 32, 64 Mbit

■ Low Power Consumption

—9 mA Typical Read

■ ETOX™ VI (0.25 µm) Flash Technology

—8, 16 and 32 Mbit

—7 A Typical Standby with Automatic

Power Savings Feature (APS)

■ Extended Temperature Operation

—–40 °C to +85 °C

The Intel^®Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest

0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.

The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-

speed, low-power operation. Flexible block locking allows any block to be independently locked

or unlocked. Add to this the Intel^®Flash Data Integrator (FDI) software and you have a cost-

effective, flexible, monolithic code plus data storage solution. Intel^®Advanced+ Boot Block Flash

Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA

packages. Additional information on this product family can be obtained by accessing the Intel^®

Flash website: http://www.intel.com/design/flash.

Notice: This specification is subject to change without notice. Verify with your local Intel sales

office that you have the latest datasheet before finalizing a design.

Order Number: 290645-017

October 2003

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与GE28F640C3TD70相关器件

型号	品牌	获取价格	描述	数据表
GE28F640J3A-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3A-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3A-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3A-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3A-150	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3C-110	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3C-115	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3C-120	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3C-125	INTEL	获取价格	Intel StrataFlash Memory (J3)
GE28F640J3C-150	INTEL	获取价格	Intel StrataFlash Memory (J3)

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