Datasheet > GE28F640L30T90

GE28F640L30T90

更新时间： 2024-11-26 08:10:59

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
92页	1208K
描述
Flash, 4MX16, 90ns, PBGA56, 0.75 MM PITCH, VFBGA-56

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GE28F640L30T90 数据手册

1.8 Volt Intel StrataFlash Wireless

Memory with 3.0 Volt I/O (L30)

28F640L30, 28F128L30, 28F256L30

Datasheet

Product Features

■ High performance Read-While-Write/Erase

— 90 ns initial access

■ Software

— 20 µs (Typ) program suspend

— 50MHz with zero wait state, 17 ns clock-to-data

— 20 µs (Typ) erase suspend

output synchronous-burst mode

— Intel® Flash Data Integrator (FDI) optimized

— Basic Command Set (BCS) and Extended

Command Set (ECS) compatible

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Common Flash Interface (CFI) capable

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming

(Buffered EFP): 3.5 µs/byte (Typ)

— 1.8 V low-power buffered and non-buffered

programming @ 10 µs/byte (Typ)

■ Security

• OTP space:

— 64 unique device identifier bits

— 64 user-programmable OTP bits

■ Architecture

— Additional 2048 user-programmable OTP

bits

— Absolute write protection: V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions

— Four 16K-Word parameter blocks: top or

bottom configurations

— 64K-Word main blocks

— Dual-operation: Read-While-Write (RWW) or

■ Quality and Reliability

Read-While-Erase (RWE)

— Expanded temperature: –25° C – +85° C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (0.13 µm)

■ Density and Packaging

— Status register for partition and device status

■ Power

— 1.7 V - 2.0 V V_CCoperation

— I/O voltage: 2.2 V - 3.3 V

— Standby current: 30 µA (Typ)

— 4-Word synchronous read current: 17 mA (Typ)

@ 54 MHz

— 64-, 128- and 256-Mbit density in VF BGA

packages

— 16-bit wide data bus

— Automatic Power Savings (APS) mode

The 1.8 Volt Intel StrataFlash^®wireless memory with 3-Volt I/O product is the latest generation of

Intel StrataFlash^®memory devices featuring flexible, multiple-partition, dual operation. It provides high

performance asynchronous read mode and synchronous-burst read mode using 1.8 Volt low-voltage, multi-

level cell (MLC) technology.

The multiple-partition architecture enables background programming or erasing to occur in one partition

while code execution or data reads take place in another partition. This dual-operation architecture also

allows two processors to interleave code operations while program and erase operations take place in the

background. 8-Mbit partitions allow system designers to choose the size ofthe code and data segments.

The 1.8 Volt Intel StrataFlash^®wireless memory with 3-Volt I/O device is manufactured using Intel

0.13 µm ETOX™ VIII process technology. It is available in industry-standard chip scale packaging.

Notice: This document contains information on products in the design phase of

development. The information here is subject to change without notice. Do not finalize

a design w ith this information.

Order Number: 251903

October 2002

12 3 4 5 6 7...92

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与GE28F640L30T90相关器件

型号	品牌	获取价格	描述	数据表
GE28F640W18BC60	INTEL	获取价格	Intel? Wireless Flash Memory
GE28F640W18BC80	INTEL	获取价格	Intel? Wireless Flash Memory
GE28F640W18BD60	INTEL	获取价格	Intel? Wireless Flash Memory
GE28F640W18BD60B	INTEL	获取价格	Flash, 4MX16, 60ns, PBGA56, 9 X 7.70 MM, 1 MM HEIGHT, VFBGA-56
GE28F640W18BD65	INTEL	获取价格	Flash, 4MX16, 65ns, PBGA56
GE28F640W18BD80	INTEL	获取价格	Intel? Wireless Flash Memory
GE28F640W18BE60	INTEL	获取价格	Flash, 4MX16, 60ns, PBGA56, 9 X 7.70 MM, 1 MM HEIGHT, VFBGA-56
GE28F640W18BE65	INTEL	获取价格	Flash, 4MX16, 65ns, PBGA56
GE28F640W18BE80	INTEL	获取价格	Flash, 4MX16, 80ns, PBGA56, 0.75 MM PITCH, VFBGA-56
GE28F640W18TC60	INTEL	获取价格	Intel? Wireless Flash Memory

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