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GE28F320C3TD70 PDF预览

GE28F320C3TD70

更新时间: 2024-11-25 03:39:11
品牌 Logo 应用领域
英特尔 - INTEL 闪存
页数 文件大小 规格书
68页 1132K
描述
Advanced+ Boot Block Flash Memory (C3)

GE28F320C3TD70 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:VFBGA-47
针数:47Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:8.32最长访问时间:70 ns
其他特性:USER-SELECTABLE 3V OR 12V VPP; TOP BOOT BLOCK启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B47
JESD-609代码:e0长度:7.286 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,63端子数量:47
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA47,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:1.8/3.3,3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1 mm部门规模:4K,32K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.055 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:NO类型:NOR TYPE
宽度:6.964 mmBase Number Matches:1

GE28F320C3TD70 数据手册

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£
Intel Advanced+ Boot Block Flash  
Memory (C3)  
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)  
Datasheet  
Product Features  
Flexible SmartVoltage Technology  
2.7 V– 3.6 V Read/Program/Erase  
12 V for Fast Production Programming  
128-bit Protection Register  
64 bit Unique Device Identifier  
64 bit User Programmable OTP Cells  
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option  
Extended Cycling Capability  
Minimum 100,000 Block Erase Cycles  
Reduces Overall System Power  
Software  
High Performance  
Intel® Flash Data Integrator (FDI)  
Supports Top or Bottom Boot Storage,  
Streaming Data (e.g., voice)  
Intel Basic Command Set  
Common Flash Interface (CFI)  
2.7 V– 3.6 V: 70 ns Max Access Time  
Optimized Architecture for Code Plus  
Data Storage  
Eight 4 Kword Blocks, Top or Bottom  
Parameter Boot  
Standard Surface Mount Packaging  
48-Ball µBGA*/VFBGA  
Up to One Hundred-Twenty-Seven 32  
Kword Blocks  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
64-Ball Easy BGA Packages  
48-Lead TSOP Package  
ETOX™ VIII (0.13 µm) Flash  
Flexible Block Locking  
Technology  
Lock/Unlock Any Block  
Full Protection on Power-Up  
WP# Pin for Hardware Block Protection  
16, 32 Mbit  
ETOX™ VII (0.18 µm) Flash Technology  
16, 32, 64 Mbit  
Low Power Consumption  
—9 mA Typical Read  
ETOX™ VI (0.25 µm) Flash Technology  
8, 16 and 32 Mbit  
—7 A Typical Standby with Automatic  
Power Savings Feature (APS)  
Extended Temperature Operation  
40 °C to +85 °C  
The Intel® Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest  
0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.  
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-  
speed, low-power operation. Flexible block locking allows any block to be independently locked  
or unlocked. Add to this the Intel® Flash Data Integrator (FDI) software and you have a cost-  
effective, flexible, monolithic code plus data storage solution. Intel® Advanced+ Boot Block Flash  
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA  
packages. Additional information on this product family can be obtained by accessing the Intel®  
Flash website: http://www.intel.com/design/flash.  
Notice: This specification is subject to change without notice. Verify with your local Intel sales  
office that you have the latest datasheet before finalizing a design.  
Order Number: 290645-017  
October 2003  

GE28F320C3TD70 替代型号

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