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GE28F320C3BC90 PDF预览

GE28F320C3BC90

更新时间: 2024-11-25 03:21:27
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路
页数 文件大小 规格书
68页 1132K
描述
Advanced+ Boot Block Flash Memory (C3)

GE28F320C3BC90 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:BGA包装说明:VFBGA-48
针数:47Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.6Is Samacsys:N
最长访问时间:90 ns其他特性:USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:7.286 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA47,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:1.8/3.3,3/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.055 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:NO
类型:NOR TYPE宽度:6.964 mm
Base Number Matches:1

GE28F320C3BC90 数据手册

 浏览型号GE28F320C3BC90的Datasheet PDF文件第2页浏览型号GE28F320C3BC90的Datasheet PDF文件第3页浏览型号GE28F320C3BC90的Datasheet PDF文件第4页浏览型号GE28F320C3BC90的Datasheet PDF文件第5页浏览型号GE28F320C3BC90的Datasheet PDF文件第6页浏览型号GE28F320C3BC90的Datasheet PDF文件第7页 
£
Intel Advanced+ Boot Block Flash  
Memory (C3)  
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)  
Datasheet  
Product Features  
Flexible SmartVoltage Technology  
2.7 V– 3.6 V Read/Program/Erase  
12 V for Fast Production Programming  
128-bit Protection Register  
64 bit Unique Device Identifier  
64 bit User Programmable OTP Cells  
1.65 V–2.5 V or 2.7 V–3.6 V I/O Option  
Extended Cycling Capability  
Minimum 100,000 Block Erase Cycles  
Reduces Overall System Power  
Software  
High Performance  
Intel® Flash Data Integrator (FDI)  
Supports Top or Bottom Boot Storage,  
Streaming Data (e.g., voice)  
Intel Basic Command Set  
Common Flash Interface (CFI)  
2.7 V– 3.6 V: 70 ns Max Access Time  
Optimized Architecture for Code Plus  
Data Storage  
Eight 4 Kword Blocks, Top or Bottom  
Parameter Boot  
Standard Surface Mount Packaging  
48-Ball µBGA*/VFBGA  
Up to One Hundred-Twenty-Seven 32  
Kword Blocks  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
64-Ball Easy BGA Packages  
48-Lead TSOP Package  
ETOX™ VIII (0.13 µm) Flash  
Flexible Block Locking  
Technology  
Lock/Unlock Any Block  
Full Protection on Power-Up  
WP# Pin for Hardware Block Protection  
16, 32 Mbit  
ETOX™ VII (0.18 µm) Flash Technology  
16, 32, 64 Mbit  
Low Power Consumption  
—9 mA Typical Read  
ETOX™ VI (0.25 µm) Flash Technology  
8, 16 and 32 Mbit  
—7 A Typical Standby with Automatic  
Power Savings Feature (APS)  
Extended Temperature Operation  
40 °C to +85 °C  
The Intel® Advanced+ Book Block Flash Memory (C3) device, manufactured on Intel’s latest  
0.13 µm and 0.18 µm technologies, represents a feature-rich solution for low-power applications.  
The C3 device incorporates low-voltage capability (3 V read, program, and erase) with high-  
speed, low-power operation. Flexible block locking allows any block to be independently locked  
or unlocked. Add to this the Intel® Flash Data Integrator (FDI) software and you have a cost-  
effective, flexible, monolithic code plus data storage solution. Intel® Advanced+ Boot Block Flash  
Memory (C3) products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball Easy BGA  
packages. Additional information on this product family can be obtained by accessing the Intel®  
Flash website: http://www.intel.com/design/flash.  
Notice: This specification is subject to change without notice. Verify with your local Intel sales  
office that you have the latest datasheet before finalizing a design.  
Order Number: 290645-017  
October 2003  

GE28F320C3BC90 替代型号

型号 品牌 替代类型 描述 数据表
GE28F320C3TD70 INTEL

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