Datasheet > GDMBD2004

GDMBD2004

更新时间： 2024-10-28 03:39:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	221K
描述
SURFACE MOUNT,SWITCHING DIODE

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中文翻译

获取价格

数据手册

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GDMBD2004 数据手册

ISSUED DATE :2005/12/23

REVISED DATE :

GTM

CORPORATION

GDMBD2004

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A

Description

The GDMBD2004 is designed for ultra high speed switching.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings (At T

Parameter

A = 25к unless otherwise specified)

Symbol

Ratings

Unit

Repetitive Peak Reverse Voltage

Continuous reverse voltage

RMS Reverse Voltage

RRM

300

240

170

225

R(VRWM

)

VR(

RMS

)

Forward Continuous Current

Non-Repetitive Peak Forward surge Current @Tp =1.0us

@Tp=1.0s

IFSM

Typical Junction Capacitance between Terminal (Note1)

Max. Reverse Recovery Time (Note2)

Power Dissipation

5.0

nSec

к/W

350

357

-65 ~ +150

Thermal Resistance Junction to Ambient Air

Operation and Storage Temperature Range

ꢀJA

, TSTG

Electrical Characteristics (At T

= 25к unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

300

R=100uA

0.85

=20mA

Forward Voltage

Reverse Current

=100mA

=225mA

1.25

100

=240V, T

=25к

=150к

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.

2. Measured at applied forward current of 30mA, reverse current of 30mA, R_L=100ꢀ and recovery to I_RR=-3mA.

3. ESD sensitive product handling required.

GDMBD2004

Page: 1/2

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