Datasheet > GDMBD4148

GDMBD4148

更新时间： 2024-10-28 03:39:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	277K
描述
SURFACE MOUNT,SWITCHING DIODE

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获取价格

数据手册

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GDMBD4148 数据手册

ISSUED DATE :2004/12/13

REVISED DATE :

GTM

CORPORATION

GDMBD4148

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O LT AG E 7 5 V, C U R R E N T 0 . 2 A

Description

The GDMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the

silicon epitaxial planar process and packed in plastic surface mount package.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-65 ~ +150

100

Unit

Junction Temperature

Storage Temperature

Tstg

V_RM

V_R

Maximum Peak Reverse Voltage

Maximum Reverse Voltage

I_O

Average Forward Current

200

I_FSM

C_J

Surge Current(1us)

Typical Junction Capacitance between Terminal (Note 1)

Maximum Reverse Recovery Time (Note2)

Total Power Dissipation

4.0

T_RR

P_D

4.0

nSec

225

Electrical Characteristics at Ta = 25к

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Forward Voltage

100

IF=10mA

IR=100uA

VR=75V

Reverse Breakdown

Reverse Current

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.

2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100 ̂˻̀̆.

3. ESD sensitive product handling required.

GDMBD4148

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