Datasheet > GD75PIT120C6SN_T4

GD75PIT120C6SN_T4

更新时间： 2024-04-09 19:02:09

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	272K
描述
C6.3.PIM

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GD75PIT120C6SN_T4 数据手册

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GD75PIT120C6SN_T4

IGBT Module

Electrical Characteristics of NTC T_C=25℃ unless otherwise noted

Symbol

R₂₅

Parameter

Rated Resistance

Test Conditions

Min. Typ . Max. Units

5.0

kΩ

∆R/R

P₂₅

Deviation of R₁₀₀T_C=100℃,R₁₀₀=493.3Ω

Power Dissipation

-5

20.0

R₂=R₂₅exp[B_25/50(1/T₂-

1/(298.15K))]

B_25/50

B-value

3375

IGBT Module

Symbol

Parameter

Min.

Typ .

Max. Units

V_ISO

L_CE

Isolation Voltage RMS,f=50Hz,t=1min

Stray Inductance

4000

Junction-to-Case (per IGBT-inverter)

Junction-to-Case (per Diode-inverter)

Junction-to-Case (per Diode-rectifier)

Junction-to-Case (per IGBT-brake-chopper)

Junction-to-Case (per Diode-brake-chopper)

Case-to-Sink (per IGBT-inverter)

Case-to-Sink (per Diode-inverter)

Case-to-Sink (per Diode-rectifier)

Case-to-Sink (per IGBT-brake-chopper)

Case-to-Sink (per Diode-brake-chopper)

Case-to-Sink (Conductive grease applied)

Maximum Junction Temperature

(inverter,brake)

0.373

0.590

0.560

0.521

1.024

R_θJC

K/W

0.134

0.212

0.201

0.187

0.367

0.009

R_θCS

T_jmax

K/W

175

150

℃

Maximum Junction Temperature(rectifier)

T_jop

T_STG

Operating Junction Temperature

-40

3.0

150

125

6.0

℃

N.m

Storage Temperature Range

Mounting Torque, Screw:M5

Weight of Module

300

1/26/2013

7/13

Rev.A

1...4 5 678 9 10...13

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