Datasheet > GD75PIT120C6SN_T4

GD75PIT120C6SN_T4

更新时间： 2024-04-09 19:02:09

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	272K
描述
C6.3.PIM

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GD75PIT120C6SN_T4

IGBT Module

Diode-inverter T_C=25℃ unless otherwise noted

Maximum Rated Values

Symbol

V_RRM

I_F

Description

Repetitive Peak Reverse Voltage @ T_j=25℃

DC Forward Current

GD75PIT120C6SN_T4 Units

1200

I_FRM

Repetitive Peak Forward Current t_p=1ms

150

Characteristics Values

Symbol

Parameter

Diode Forward

Vol tage

Test Conditions

Min. Typ . Max. Units

T_j=25℃

1.70 2.10

1.65

V_F

I_F=75A,V_GE=0V

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

6.1

11.2

Q_r

Recovered Charge

μC

I_F=75A,

Peak Reverse

Recovery Current R_G=5.1Ω,

Reverse Recovery

Energy

V_R=600V,

I_RM

E_rec

V_GE=-15V

2.89

5.24

Diode-rectifier T_C=25℃ unless otherwise noted

Maximum Rated Values

Symbol

V_RRM

I_F

Description

Repetitive Peak Reverse Voltage @ T_j=25℃

DC Forward Current @ T_C=100℃

Maximum RMS Current At Rectifier Output

@ T_C=80℃

GD75PIT120C6SN_T4 Units

1600

I_RMSM

140

Surge Forward Current

V_R=0V,t_p=10ms,T_j=45℃

I²t-value,V_R=0V,t _p=10ms,T_j=45℃

I_FSM

I²t

1100

6050

A²s

Characteristics Values

Symbol

V_F

I_R

Parameter

Diode Forward Vol tage

Reverse Current

Test Conditions

I_F=75A,T_j=150℃

T_j=150℃,V_R=1600V

Min. Typ . Max. Units

1.08

2.0

1/26/2013

4/13

Rev.A

1 2 345 6 7...13

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