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GD800HFL170C3S PDF预览

GD800HFL170C3S

更新时间: 2024-09-26 17:02:03
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 338K
描述
C3.1-Half Bridge

GD800HFL170C3S 数据手册

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GD800HFL170C3S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD800HFL170C3S  
1700V/800A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
high power converters.  
Features  
Low VCE(sat) SPT+ IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
High Power Converters  
Motor Drivers  
Wind Turbines  
Equivalent Circuit Schematic  
©2014 STARPOWER Semiconductor Ltd.  
4/8/2014  
1/9  
ZY0A  

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