Datasheet > GD75PIT120C6SN_T4

GD75PIT120C6SN_T4

更新时间： 2024-04-09 19:02:09

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
13页	272K
描述
C6.3.PIM

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GD75PIT120C6SN_T4 数据手册

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GD75PIT120C6SN_T4

IGBT Module

Switching Characteristics

Symbol

Parameter

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching

Loss

Turn-Off Switching

Loss

Test Conditions

Min. Typ . Max. Units

t_d(on)

t_r

t_d(off)

t_f

291

248

205

V_CC=600V,I_C=35A,

R_G=24Ω,V_GE=±15V,

T_j=25℃

E_on

E_off

4.29

1.64

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching

Loss

295

260

242

V_CC=600V,I_C=35A,

R_G=24Ω,V_GE=±15V,

T_j=125℃

E_on

4.76

Turn-Off Switching

Loss

Input Capacitance

Reverse Transfer

Capacitance

E_off

C_ies

C_res

2.57

4.12

0.10

V_CE=30V,f=1Mhz,

V_GE=0V

V_CC=600V,I_C=35A,

V_GE=15V

Q_G

Gate Charge

170

R_Gint

Internal Gate Resistor

t_P≤10μs,V_GE=15 V,

T_j=125℃,V _CC=900V,

V_CEM≤1200V

I_SC

SC Data

350

Diode-brake-chopper T_C=25℃ unless otherwise noted

Maximum Rated Values

Symbol

V_RRM

I_F

Description

Repetitive Peak Reverse Voltage @ T_j=25℃

DC Forward Current

GD75PIT120C6SN_T4 Units

1200

I_FRM

Repetitive Peak Forward Current t_p=1ms

Characteristics Values

Symbol

Parameter

Diode Forward

Vol tage

Test Conditions

Min. Typ . Max. Units

T_j=25℃

2.00 2.40

1.90

V_F

I_F=35A,V_GE=0V

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

T_j=25℃

T_j=125℃

2.2

μC

4.2

Q_r

Recovered Charge

Peak Reverse

Recovery Current R_G=24Ω,

Reverse Recovery

I_F=35A,

V_R=600V,

I_RM

E_rec

V_GE=-15V

1.20

2.23

Energy

1/26/2013

6/13

Rev.A

1...3 4 567 8 9...13

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