Datasheet > GD150HFL120C2S

GD150HFL120C2S

更新时间： 2022-04-08 14:05:59

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GD150HFL120C2S 数据手册

GD150HFL120C2S

IGBT Module

Symbol

Description

GD150HFL120C2S

Units

V_GES

Gate-Emitter Voltage

±20

300

Collector Current @ T_C=25℃,T_j=150℃

@ T_C=80℃,T_j=150℃

I_C

150

I_CM(1)

Pulsed Collector Current t_p=1ms

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum power Dissipation @ T_j=150℃

Short Circuit Withstand Time @ T_j=125℃

Operating Junction Temperature

Storage Temperature Range

300

I_F

150

I_FM

300

P_D

1422

T_SC

μs

T_j

-40 to +150

-40 to +125

4800

℃

A²s

T_STG

I²t-value, Diode

V_R=0V,t=10ms,T_j=125℃

V_ISO

Isolation Voltage RMS,f=50Hz,t=1min

Power Terminal Screw:M6

2500

2.5 to 5

3 to 6

N.m

Mounting Torque

Mounting Screw:M6

Notes:

(1) Repetitive rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT T_C=25℃unless otherwise noted

Off Characteristics

Symbol

Parameter

Collector-Emitter

Breakdown Voltage

Test Conditions

Min. Typ. Max. Units

V_(BR)CES

T_j=25℃

1200

V_CE=V_CES,V_GE=0V,

T_j=25℃

I_CES

I_GES

Collector Cut-Off Current

5.0

Gate-Emitter Leakage

Current

V_GE=V_GES,V_CE=0V,

T_j=25℃

400

On Characteristics

Symbol

V_GE(th)

Parameter

Test Conditions

I_C=6mA,V_CE=V_GE,

T_j=25℃

Min. Typ. Max. Units

Gate-Emitter Threshold

Voltage

5.0

6.2

1.9

2.1

7.0

I_C=150A,V_GE=15V,

T_j=25℃

Collector to Emitter

Saturation Voltage

V_CE(sat)

I_C=150A,V_GE=15V,

T_j=125℃

Switching Characteristics

Symbol

t_d(on)

t_r

Parameter

Turn-On Delay Time

Rise Time

Test Conditions

Min. Typ. Max. Units

190

V_CC=600V,I_C=150A,

R_G=6.8Ω,V_GE=±15V,

T_j=25℃

t_d(off)

Turn-Off Delay Time

460

2/11/2011

2/8

Rev.C

123 4 5 6 7 8

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